Sharp Kabushiki Kaisha Corporation

Naoki Asano

Kazuya Tsujino

Masamichi Kobayashi

Chikao Okamoto

Toshihiko Sakai

Liumin Zou

Yuta Matsumoto

Teruaki Higo

Rihito Suganuma

Natsuko Fujiwara

Takeshi Kamikawa

Masatomi Harada

Naoki Koide

Hiroaki Shigeta

Kenichi Higashi

Takeshi Hieda

A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.

Photovoltaic devices and photovoltaic modules

A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.

A photoelectric conversion element includes an n-type semiconductor substrate, a p-type amorphous semiconductor film on the side of a first surface and side surface of the semiconductor substrate, an n-type amorphous semiconductor film on the first surface side of the semiconductor substrate, a p-electrode on the p-type amorphous semiconductor film, and an n-electrode on the n-type amorphous semiconductor film. The p-electrode is located on the p-type amorphous semiconductor film, which is placed on the first surface side and side surface of the semiconductor substrate.

Photoelectric conversion element

Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.

There is provided a photoelectric conversion element which includes an n-type single crystal silicon substrate (). The n-type single crystal silicon substrate () includes a central region () and an end-portion region (). The central region () is a region which has the same central point as the central point of the n-type single crystal silicon substrate () and is surrounded by a circle. The diameter of the circle is set to be a length which is 40% of a length of the shortest side among four sides of the n-type single crystal silicon substrate (). The central region () has a thickness t. The end-portion region () is a region of being within 5 mm from an edge of the n-type single crystal silicon substrate (). The end-portion region () is disposed on an outside of the central region () in an in-plane direction of the n-type single crystal silicon substrate (), and has a thickness twhich is thinner than the thickness t. The end-portion region () has average surface roughness which is smaller than average surface roughness of the central region ().

Photoelectric conversion element and solar cell module provided with same

Growing community of inventors

Sakai, Japan

Naoki Asano