The Foundation: the Research Institute of Electric and Magnetic Alloys

Teraoka Seiko Co., Ltd.

The Research Institute of Electric and Magnetic Alloys

The Foundation: the Research Institute of Electric and Magentic Alloys

Naoji Nakamura

Hakaru Masumoto

Yuetsu Murakami

Katashi Masumoto

Hiroshi Tanaka

Yoshinobu Nishimura

Katsumi Mochizuki

Seishi Abe

High temperature coefficient of resistance (TCR) appropriate for the sensor evices is attained by an alloy consisting, by atomic %, of from 5 to 65% of Fe, and from 0.01 to 20% in total of at least one auxiliary component selected from the group consisting of 20% or less of Ni, 20% or less of Co, 20% or less of Ag, 20% or less of Au, 20% or less of Pt, 10% or less of Rh, 10% or less of Ir, 10% or less of Os, 10% or less of Ru, 10% or less of Cr, 5% or less of V, 5% or less of Ti, 5% or less of Zr, 5% or less of Hf, 8% or less of Mo, 5% or less of Nb, 10% or less of W, 8% or less of Ta, 3% or less of Ga, 3% or less of Ge, 3% or less of In, 3% or less of Be, 5% or less of Sn, 3% or less of Sb, 5% or less of Cu, 5% or less of Al, 5% or less of Si, 2% or less of C, 2% or less of B, and 5% or less of a rare earth element, the balance being essentially Pd and minor amount of impurities, and said alloy having 4000.times.10.sup.-6.degree. C..sup.-1 or more of TCR in a temperature range of from 0.degree. to 200.degree. C. The alloy may further contain from 5 to 65% of Mn.

Electrical resistant alloy having a high temperature coefficient of

The present invention relates to a solid solution semiconductor laser element material which can be used for a laser element which oscillates within an inflated region of wavelength range of 0.4-8 .mu.m, can vary wavelength and can be operable in the vicinity of room temperature. The present invention more particularly relates to a material which can be used for a laser element having a lattice matching type double hetero-structure or lattice matching type quantum well structure.

Solid-solution semiconductor laser element material and laser element

Disclosed herein is a load cell provided with a high-precision load-sensing member of ceramic on which are formed patterns of thin-film resistance for strain gages which are not subject to breakage and variation of resistance. The load cell comprises a bending beam of ceramic material and strain gages of thin-film resistance formed thereon, with the bending beam having a surface coated with amorphous glass on which are formed said strain gages of thin-film resistance. The strain gages are formed from an alloy composed of iron and one or more selected from chromium, cobalt, tungsten, molybdenum, niobium, and tantalum, and a small amount of impurities.

Load cell

The disclosed alloy has a temperature coefficient of electric resistance h an absolute value smaller than 100 ppm/.degree.C. in a temperature range between the order-disorder transformation point and melting point thereof, which alloy is made by molding an alloy consisting of 59.0-88.0 wt. % of palladium and the remainder of iron with a small amount of impurities, quenching the molded alloy from a temperature between the above-mentioned order-disorder transformation point and melting point to room temperature, cold working the quenched alloy for shaping, and annealing the shaped alloy.

Alloy with small change of electric resistance over wide temperature

The disclosed alloy has a temperature coefficient of electric resistance with an absolute value smaller than 100 ppm/.degree.C. in a temperature range between the order-disorder transformation point and melting point thereof, which alloy is made by molding an alloy consisting of 59.0-88.0 wt. % of palladium and the remainder of iron with a small amount of impurities, quenching the molded alloy from a temperature between the above-mentioned order-disorder transformation point and melting point to room temperature, cold working the quenched alloy for shaping, and annealing the shaped alloy.

An electrical resistant alloy for use in a sensing coil having a small temperature dependence of electric resistance over a wide temperature range and a method of producing the same are disclosed. This alloy consists of 55.5 to 60.6 wt % of palladium and 44.5 to 39.4 wt % of silver and an inevitable amount of impurities, and has a temperature coefficient of electric resistance of .+-.20.times.10.sup.-6 /.degree.C. over a temperature range of -50.degree. C. to +730.degree. C.

Electrical resistant alloys having a small temperature dependence of

Electrical resistant article having a small temperature dependence of

A rectangular hysteresis magnetic alloy consisting of 0.5-25 wt. % of Ta the balance of Fe and a rectangular hysteresis magnetic alloy consisting of 0.5-25 wt. % of Ta, 0.01-60 wt. % in total amount of at least one element selected from the group consisting of 0-10% of V, 0-0.5% of Nb, 0-35% of Cr, 0-20% of Mo, 0-20% of W, 0-25% of Ni, 0-25% of Cu, 0-40% of Co, 0-5% of Ti, 0-5% of Zr, 0-5% of Si, 0-10% of Al, 0-5% of Ge, 0-5% of Sn, 0-5% of Sb, 0-3% of Be, 0-15% of Mn, 0-2% of Ce and 0-1.5% of C, and the balance of Fe have an excellent rectangular hysteresis loop, a coercive force of more than 2 oerstads, excellent forgeability and workability, and are particularly suitable as a magnetic material for electromagnetic devices requiring rectangular hysteresis loop.

Rectangular hysteresis magnetic alloy

A rectangular hysteresis magnetic alloy consisting of 0.5-10 wt. % of Nb the balance of Fe and a rectangular hysteresis magnetic alloy consisting of 0.5-10 wt. % of Nb, 0.01-60 wt. % in total amount of at least one element selected from the group consisting of 0-10% of V, 0-25% of Ta, 0-25% of Cr, 0-20% of Mo, 0-10% of W, 0-30% of Ni, 0-20% of Cu, 0-45% of Co, 0-5% of Ti, 0-5% of Zr, 0-5% of Si, 0-5% of Al, 0-5% of Ge, 0-5% of Sn, 0-5% of Sb, 0-3% of Be, 0-15% of Mn, 0-2% of Ce and 0-1.5% of C, and the balance of Fe have an excellent rectangular hysteresis loop, a coercive force of more than 2 oersteds, excellent forgeability and workability and are particularly suitable as a magnetic material for electromagnetic devices requiring rectangular hysteresis loop.

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Sendai, Japan

Naoji Nakamura