Sumitomo Electric Industries, Limited

Japan Atomic Energy Research Institute

Naoji Fujimori

Takahiro Imai

Keiichiro Tanabe

Hideaki Nakahata

Shuji Yazu

Akihiko Ikegaya

Keizo Harada

Nobuhiro Ota

Hideo Itozaki

Tetsuji Jodai

Hiromu Shiomi

Yoshiyuki Yamamoto

Akihiro Hachigo

Takashi Tsuno

Yuichiro Seki

Yoshiki Nishibayashi

Shinichi Shikata

Kenjiro Higaki

Toshiya Takahashi

Takaharu Yamamoto

Saburo Tanaka

Shin-ichi Shikata

Tsuyoshi Asai

Takayuki Shibata

Katsuko Harano

Akihoko Ikegaya

Masaya Miyake

Tatsuoki Nagaishi

Nobuhiko Fujita

Motoyuki Tanaka

Katsuyuki Tanaka

Akira Doi

Tetsuo Yashiki

Tsutomu Nakamura

Noriyuki Yoshida

Satoshi Takano

Tomoyuki Awazu

Akio Hara

Noriki Hayashi

Kenji Miyazaki

Katsuko Yamamoto

Tetsuya Abe

Yoshiharu Utsumi

Hisao Hattori

Takeshi Kobayashi

Masaaki Tobioka

Yoshio Murakami

Kenichi Watanabe

Hiroshi Kawarada

Yoshiaki Kumazawa

Takahisa Iguchi

Hideo Shingu

Masataka Oji

Junji Degawa

Keiichi Ishihara

Yasuhiro Shimizu

Tadafumi Adschiri

Tetuso Nakai

Takehiko Furusawa, Deceased

Yoshiharu Utumi

Masa-aki Tobioka

Hisashi Hosotani

Yasuo Tano

This polishing apparatus permits for polishing of hard-material coated complex films that traditionally have been difficult to polish due to the hardness of the films, the fragility of the substrate, and the inherent distortion of the film. The polishing apparatus includes a rotary turn-table, a holder for a wafer having the film, a shaft connected to the center of the holder for transmitting rotation and pressure to the holder and permitting the holder to incline, an arm rotatably supporting the holder, a cylinder for applying pressure to the center of the shaft, a driving device for rotating the shaft, and at least one auxiliary shaft. The auxiliary shaft pushes peripheral points along a diameter of the holder in order to impart a swaying motion on the holder.

Polishing apparatus for polishing a hard material-coated wafer

A conductive polycrystalline diamond film having specific resistance of at least 1&times;10,&OHgr;cm and less than,&OHgr;cm, whose film thickness is in the range of at least 0.1 &mgr;m and not more than 500 &mgr;m, is film-formed by vapor-phase synthesis on a surface employed for pressure bonding, a surface opposite to this surface or at least two side surfaces intersecting with these surfaces on a substrate of a bonding tool tip that is applicable for bonding and packaging a semiconductor chip.

Tool tip and bonding tool comprising the tool tip and control method for the bonding tool

A method of producing and polishing a hard-material-coated wafer. A hard-material film is disposed on a substrate to form the wafer and provide the wafer with a convex shape. A surface of the substrate is fixed on a holder of a polishing machine having a whetstone turn-table. The holder is rotated about its axis, and the whetstone turn-table is revolved about its shaft. The convex film surface of the hard-material film is polished on the whetstone turn-table while the inclination angle of the holder relative to the turn-table is changed. In this way, the convex film surface is polished either from its center to its periphery or from its periphery to its center.

Method of polishing a hard material-coated wafer

Diamond having a large coefficient of thermal conductivity is prepared by a CVD method in which a reaction gas is decomposed and reacted under such condition that a concentration of carbon atoms in relation to hydrogen gas (A %), a concentration of nitrogen gas in relation to the whole reaction gas (B ppm) and a concentration of oxygen atoms in relation to the hydrogen gas (C %) satisfy the equation:

Chemical vapor deposition method of high quality diamond

A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.

Diamond wafer and method of producing a diamond wafer

A single crystal quartz thin film having a thickness of 5 nm to 50 .mu.m can be prepared by forming the thin film on a single crystal substrate by a sol-gel process and peeling the thin film from the substrate. The present invention can provide the single crystal quartz thin film at a low price without a large and complex apparatus.

Single crystal quartz thin film and preparation thereof

No wide bulk diamond wafer exists at present. A wide diamond-coated wafer is proposed instead of the bulk diamond wafer. Diamond is heteroepitaxially deposited on a convex-distorted non-diamond single crystal substrate by a vapor phase deposition method. In an early step, a negative bias is applied to the substrate. In the case of a Si substrate, an intermediate layer of .beta.-SiC is first deposited on the Si substrate by supplying a low carbon concentration material gas. Then the carbon concentration is raised for making a diamond film. The convex-distorted wafer is stuck to a holder having a shaft which is capable of inclining to the holder. The wafer is pushed to a turn-table of a polishing machine. The convex diamond wafer can fully be polished by inclining the holder to the shaft. A wide distorted mirror wafer of diamond is produced. Fine wire patterns can be made on the diamond mirror wafer by the photolithography.

Wafer and method of producing same

An object of the invention is to provide a high quality synthetic diamond having a high bonding strength between a substrate surface and synthetic diamond or between synthetic diamond films. The object can be attained by a process for the synthesis of diamond comprising pre-heating mixed gases of a hydrocarbon and hydrogen by a heating body and feeding the heated mixed gases to a substrate surface heated to deposit diamond thereon, characterized by allowing the distance between the heating body and substrate surface to be apart from each other as far as possible in the carburizing step of the heating body and allowing the distance between the heating body and substrate surface to be nearer in the step of synthesizing diamond than in the former case.

Hot filament CVD of diamond films

A semiconductor substrate comprising a single crystal substrate base such a silicon and a superconducting thin film layer deposited on said substrate base and composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta.. (Ln is lanthanide).

Semiconductor substrate having a superconducting thin film

An oxide thin film having a quartz crystal structure formed on a substrate, the oxide thin film being composed of a single layer or a plurality of layers having a thickness of 5 nm to 50 .mu.m per layer, each of the layer comprising silicon dioxide, germanium dioxide, or a mixture thereof.

Oxide thin film having quartz crystal structure

An X-ray generation apparatus has an anticathode which includes a high thermal conductive substrate and a target for generating X-rays by irradiation with electrons. The target penetrates the high heat conductive substrate. Improved cooling efficiency and durability of the anticathode is obtained as well as miniaturization and simplification of the X-ray generation apparatus is achieved.

X-ray generation apparatus

A diamond wafer including a substrate and a (111) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (111) oriented film is produced by supplying a lower carbon concentration gas and a higher carbon concentration gas alternately. The lower carbon concentration means 0% to 1% of the atomic ratio C/H. The higher carbon concentration means 1% to 8% of the atomic ratio C/H. More than 40% of layered defects are either parallel with or slanting at an angle less than 5 degrees to the surface. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.

Wafer and method of producing a wafer

High quality diamond excellent in crystalline property as well as transparency, can be synthesized at a high growth speed by a process which comprises using, as a raw material gas, a mixed gas of hydrogen gas A, an inert gas B, a carbon atom-containing gas C and an oxygen atom-containing inorganic gas D in such a proportion as satisfying the following relationship by mole ratio:

Highly crystalline diamond

A hard material-coated wafer that having a distortable substrate and a hard material film deposited thereon by a CVD method is provided. The substrate is substantially flat while in a free-standing state. However, deposition of the hard material film having a Vickers hardness of more than Hv3000 on the substrate causes the substrate to distort into a generally convex-shape. Specifically, the wafer is distorted to the film side with a distortion height H of -150 .mu.m to -2 .mu.m. The resulting wafer can have a total thickness that ranges from 0.1 mm to 2.1 mm; and a diameter that is bigger than 25 mm. Moreover, more than 50% of the film can be polished to a roughness less than Rmax 50 nm and Ra 20 nm.

Hard material-coated wafer, method of making same, polishing apparatus

A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are combined with the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such heat sink is produced by a simple process including arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper ends of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.

Process for the production of a diamond heat sink

Growing community of inventors

Hyogo, Japan

Naoji Fujimori