Nippon Soken, Inc.

Nippondenso Co., Ltd.

Denso Corporation

Naohito Mizuno

Tadashi Hattori

Minoru Nishida

Shinichi Hirose

Novuei Ito

Seizi Huzino

Yoshiyasu Ando

Hiroyuki Ban

Tadashi Ozaki

Masahito Imai

Yoshinori Ohtsuka

Kinya Atsumi

Hiromi Ariyoshi

Nobuyoshi Sakakibara

Morihiro Atsumi

Tetsuro Kikuchi

Yoshitaka Gotoh

Hiroshi Uesugi

Kenji Kanemaru

Naochika Nunogaki

Takahiro Nakano

Norio Kitao

Koichi Kamabora

Takayuki Tominaga

Michio Hisanaga

Katsuhito Takeuchi

Yasuki Shimoyama

Nobuyasu Gotou

Yoshihiro Inutsuka

A semiconductor device includes a semiconductor element, a sealing member, and a rewiring layer. The rewiring layer includes an insulating layer covering a front surface of the semiconductor element and a part of the sealing member, an electrode connected to the semiconductor element, and an externally-exposed layer being conductive and covering a portion of the electrode exposed from the insulating layer.

Semiconductor device and semiconductor module

A semiconductor device is composed of a heat sink, an IC chip mounted and fixed on a specific face of the heat sink, a lead frame electrically connected to the IC chip and a sealing mold resin package. One or more of the faces of the heat sink has a specific surface area.

Semiconductor device

An electronic circuit device fabrication method securing a bond width of a seal portion when heat treatment is needed in sealing a device cavity by a cap. An electronic part mounting step is executed to secure electronic parts, including a semiconductor acceleration sensor chip, within a package main body by using a silicone group die bonding material and a silicone group silver paste. At a baking step, the package main body mounted with the electronic part is heated to a baking temperature of about 380.degree. C..+-.5.degree. C. In a sealing step, the package main body and the cap are bonded by a sealing material by executing a heat treatment in a state where the sealing material, comprising a low melting point glass, is interposed between a peripheral edge portion of the cavity in the package main body and the cap. The temperature of the package main body is then heated in the heat treatment to about 365.degree. C..+-.5.degree. C., which is lower than the baking temperature at the baking step.

Method of fabricating electronic circuit device

A semiconductor sensor chip such as an acceleration sensor chip and other electronic components such as controlling semiconductor chips are mounted on and connected to conductor patterns formed on a ceramic package. The ceramic package is heated together with a cap to hermetically seal the ceramic package containing the sensor chip and electronic components therein. The conductor pattern formed on the ceramic package is composed of a base film of, i.e., tungsten, an intermediate film of nickel plated on the base film and a thin surface film of gold which is formed on the intermediate film by flash plating. The conductor patterns are also formed at outside portions of the ceramic package. The ceramic package is mounted on a printed board by soldering at portions where the conductor patterns are formed. Though the surface gold film is thin and made at a low cost, it provides an excellent surface of the conductor patterns for securing a good solder wettability and bonding quality.

Structure for mounting electronic components and method for mounting the

Knock sensor

An acceleration detecting device, which can be constructed simply and allow compactness, is disclosed. A cover is installed on a housing-body portion to form a hollow portion, and a sensor chip which is subjected to acceleration and displaced is bonded and fixed within this hollow portion. This housing-body portion has a flat end face, and electrical wiring leads and electrically connected to the sensor chip is formed on the end face via the interior of the housing-body portion. This end face is electrically and mechanically connected to a circuit board by a bonding agent, and the housing-body portion is fixed to the circuit board substantially perpendicularly.

Physical-quantity detecting device

A micro machining apparatus forms a high-aspect structure having an optional depth in a workpiece at low cost. The apparatus applies high-frequency electric power to the workpiece and a machining electrode, to form a plasma zone in the vicinity of the leading end of the machining electrode. The apparatus guides a reactive gas into the plasma zone to activate the gas. The activated gas is adsorbed by the surface of the workpiece that faces the leading end of the machining electrode. The adsorbed gas reacts with the material of the workpiece and locally etches off the surface of the workpiece. A feed mechanism of the apparatus feeds the machining electrode toward the workpiece according to the progress of the etching, thereby forming a trench in the workpiece. Reaction products of the workpiece and reactive gas produced by the etching adhere to and deposit on the sidewall of the trench and form a protective film for protecting the sidewall from being etched, thereby providing the trench with a high aspect ratio.

Fine structure forming device

A device for detecting pressure of a high temperature pressurized fluid. A sensing element having a diaphragm adjacent to one end and a lead wire outlet adjacent to another end in the longitudinal direction of a rectangular parallelopiped configuration of the sensing element including the diaphragm. Thus, the lead wire outlet is a predetermined distance from the diaphragm heated by high temperature fluid. This prevents the lead wire outlet and the other electrical assemblies from suffering deterioration or misoperation caused by high temperature. The reliability of the pressure detecting device can be improved.

Pressure detecting device

A semiconductor pressure sensor having a cylindrical housing with an opening formed at its tip end which is exposed to a pressure atmosphere and a metal diaphragm for receiving pressure, which is formed in a wall of the cylindrical housing defining the opening. A metal oxide layer is formed in a surface of the metal diaphragm by oxidizing the surface of the metal diaphragm, and a glass layer is formed on the metal oxide layer. A semiconductor chip, on which a strain gauge is formed, is firmly and surely bonded to the metal diaphragm through the glass layer by virtue of the metal oxide layer. This semiconductor pressure sensor can measure high pressure with sufficient sensitivity and high accuracy.

Semiconductor pressure sensor and method for bonding semiconductor chip

A semiconductor pressure sensor having a cylindrical housing with an opening formed at its tip end which is exposed to a pressure atmosphere and a metal diaphragm for receiving pressure which is formed in a wall of the cylindrical housing defining the opening. A metal oxide layer is formed in a surface of the metal diaphragm by oxidizing the surface of the metal diaphragm, and a glass layer is formed on the metal oxide layer. A semiconductor chip, on which a strain gauge is formed, is firmly and surely bonded to the metal diaphragm through the glass layer by virtue of the metal oxide layer. This semiconductor pressure sensor can measure high pressure with sufficient sensitivity and high accuracy.

Semiconductor pressure sensor with method diaphragm

A pressure sensor includes a metal diaphragm provided at the end of a pressure introduction portion, a glass layer bonded to a surface of the metal diaphragm opposite to the pressure introduction side thereof, and a semiconductor chip acting as a semiconductor strain gauge bonded to the surface of the glass layer.

Pressure sensor

A ceramic heater has a heater element made of a mixture including MoSi.sub.2 and Si.sub.3 N.sub.4 powder as a main ingredient and silica (SiO.sub.2) powder as an additive, a heater support member made of an electrically insulating ceramic sintered body for supporting the heater element and an electric current supply means for supplying an electric current to the heater element. The composition of the mixture for the heater element is defined so as to satisfy the following formula: 0.035.ltoreq.B/A&lt;0.35 where A is the amount of Si.sub.3 N.sub.4 expressed by mol percent of the total amount of the main ingredient of MoSi.sub.2 and Si.sub.3 N.sub.4 and B is the amount of SiO.sub.2 expressed by mol percent of the total amount of the main ingredient of MoSi.sub.2 and Si.sub.3 N.sub.4.

Ceramic heater

A glow plug for an internal combustion engine is disclosed. The glow plug of the present invention comprises a heater support member projecting into a combustion chamber of an internal combustion engine, the heater support member being formed of an electric insulating material; a heater member affixed to the outer surface of the heater support member, the heater member being formed of an electrically conductive, heat- and oxidation-resistant ceramic material; at least three lead wires for power supply embedded in the heater support member, one end of the lead wires being connected each independently to the heater member; and a power switching means interposed between the other ends of those lead wires and a power source for connecting the power source selectively between the lead wires. By the selective connection between the lead wires performed by the power switching means, a plurality of heater elements having different resistance values are formed within the heater member.

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Kariya, Japan

Naohito Mizuno