Tokyo Ohka Kogyo Co., Ltd.

Naohisa Ueno

Jun Koshiyama

Yoshiki Sugeta

Tomoya Kumagai

Mai Sugawara

Masaaki Yoshida

Fumitake Kaneko

Toshikazu Tachikawa

Takayuki Haraguchi

Daijiro Mori

Takuya Ohhashi

Yuriko Shirai

A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.

Cleaning liquid for lithography and method for cleaning substrate

A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, Rto Rrepresent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of Rto Rrepresents a hydrogen atom. One of Rto Rmay bind with Rto form a ring structure. Yand Yrepresent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5. 

Stripping solution for photolithography and pattern formation method

A stripping solution for photolithography which can effectively strip away residual materials of a photoresist pattern and etching residual materials, and has excellent anticorrosion properties on SiOand a variety of metal materials; and a method for forming a pattern using the stripping solution. A prescribed basic compound is used as a counter amine of the hydrofluoric acid contained in the stripping solution for photolithography, and the stripping solution for photolithography is adjusted to a pH measured at 23&#xb0; C. of not more than 6.0 or 8.5 or more.

A developing solution for photolithography in which tetrabutylammonium hydroxide (TBAH) is used as an alkaline agent of the developing solution and deposition of TBAH is suppressed. A method for producing a developing solution for photolithography capable of suppressing TBAH deposition when producing the developing solution by diluting a concentrated developing solution containing TBAH and a production apparatus used for the production method. The developing solution includes tetrabutylammonium hydroxide and at least one of a water-soluble organic solvent, a surfactant, and a clathrate compound. The temperature of the liquid is maintained at 27&#xb0; C. or higher during dilution.

Developing solution for photolithography, method for forming resist pattern, and method and apparatus for producing developing solution for photolithography

Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.

Surface treatment agent and surface treatment method

It is disclosed an over-coating agent for forming fine-line patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, further characterized by comprising a water-soluble polymer which contains at least methacrylic acid and/or methyl methacrylate as the constitutive monomer thereof. Also disclosed is a method of forming fine-line patterns using the over-coating agent. The advantages of the invention are that the exposure margin is large, that the dimension control of photoresist patterns can be reflected on the dimension controllability in forming fine-line patterns, that the dimension control and planning of forming fine trace patterns after treatment for thermal shrinkage can be attained with ease in the stage of photoresist patterning, that the original photoresist pattern profile can be kept as such and the top of the photoresist pattern is not rounded after thermal shrinkage, that the degree of thermal shrinkage of the over-coating agent is large and thus the agent is effective in forming fine-line patterns.

Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent

The present invention provides a method for forming a micropattern, enabling to narrow intervals between resist patterns, in which the narrowing extent of intervals between resist patterns can be increased while maintaining the controllability of resist pattern dimensions and the good resist pattern shape within a wafer face. The present invention relates a method for forming a micropattern comprising: a coating film formation process for applying a coating composition to form a coating film on a substrate having a resist pattern; a first heating treatment process for heat-treating the coating film; a coating film removal process for removing the coating film after the first heating treatment process; and a second heat treatment process for heat-treating the pattern narrowed after the coating film removal process.

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Kawasaki, Japan

Naohisa Ueno