Shin-etsu Handotai Co., Ltd.

Shin-estu Handotai Co., Ltd.

Naohisa Toda

Ryoji Hoshi

Tomoyuki Sakai

Hitoshi Habuka

Ken Aihara

Naoto Tate

Fumio Tahara

Tomosuke Yoshida

Fumitaka Kume

Satoshi Tobe

A silicon epitaxial layeris grown in vapor phase on a silicon single crystal substratemanufactured by the Czochralski method, and doped with boron so as to adjust the resistivity to 0.02 &#x3a9;&#xb7;cm or below, oxygen precipitation nucleiare formed in the silicon single crystal substrate, by carrying out annealing at 450&#xb0; C. to 750&#xb0; C., in an oxidizing atmosphere, for a duration of time allowing formation of a silicon oxide film only to as thick as 2 nm or below on the silicon epitaxial layeras a result of the annealing, and thus-formed silicon oxide filmis etched as the first cleaning after the low-temperature annealing, using a cleaning solution. By this process, the final residual thickness of the silicon oxide film can be suppressed only to a level equivalent to native oxide film, without relying upon the hydrofluoric acid cleaning.

Method of manufacturing silicon epitaxial wafer

Heat-treating method and radiant heating device

Growing community of inventors

Annaka, Japan

Naohisa Toda