Nuflare Technology, Inc.

Central Research Institute of Electric Power Industry

Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Showa Denko K.k.

Naohisa Ikeya

Kunihiko Suzuki

Hiroaki Fujibayashi

Hideki Ito

Hidekazu Tsuchida

Masahiko Ito

Isaho Kamata

Kazukuni Hara

Masami Naito

Katsumi Suzuki

Takahiro Kozawa

Ayumu Adachi

Koichi Nishikawa

Yoshikazu Moriyama

Keisuke Fukada

Hideyuki Uehigashi

Masayoshi Yajima

Hirofumi Aoki

Hideki Matsuura

A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

Film forming apparatus

A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.

An apparatus of an embodiment includes: a processing-chamber; a susceptor capable of supporting a substrate, the susceptor including a first member having an opening in a central portion, and a second member covering the opening; a support configured to support and rotate the susceptor in the processing-chamber; and a lift disposed in the support, and capable of moving up and down at least one of the first member and the second member, wherein the support is capable of rotating the susceptor to have predefined phases with respect to the lift, and when the lift moves up, the lift is brought into contact with the first member if the susceptor is in a first phase, and the lift is brought into contact with the second member if the susceptor is in a second phase that is different from the first phase.

Substrate processing apparatus, transfer method, and susceptor

A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

Film-forming apparatus and film-forming method

A method for manufacturing a semiconductor device, comprising: loading a wafer to be subjected to film formation to a chamber; supporting the wafer to be spaced from a film formation position of the wafer; preliminarily heating the wafer while rotating a rotating member for rotating the wafer through a supporting member during the film formation at a predetermined rotational speed under a state of the wafer to be spaced from the film formation position; placing the wafer on the supporting member in the film formation position; and heating the wafer at a predetermined temperature and supplying a process gas onto the wafer while rotating the wafer.

Method and apparatus for manufacturing semiconductor device

Growing community of inventors

Kanagawa, Japan

Naohisa Ikeya