Renesas Electronics Corporation

Naohiro Yoshimura

Makoto Tanaka

Akihiro Nakahara

Osamu Soma

Detection transistor MNd flows a detection current IdN to a current path CPwhen an output voltage Vo generated in a load terminal PNis than a ground voltage GND. A current mirror circuit CMptransfers the detection current IdN flowing in the current path CPto a current path CP. Detecting resistor element Rdconverts a mirror current Iflowing in the current path CPto a detection voltage Vd. A control transistor MNcis turned on when the converted detection voltage Vdis higher than a predetermined value. Then, the output transistor QO is controlled to be off while the control transistor MNcis on.

Semiconductor device and control system

The power control device reliably disconnects the current path of the failed output transistor. In particular, the power control device includes output transistors, an output terminal, bonding wires connecting the output transistors to the output terminal, output transistor driving circuits controlling the output of the output transistors, and a failure detection circuit detecting the failure of the output transistors. When the failure detection circuit detects the failure of the output transistors and outputs the failure detection signals, the output transistor drive circuits control the outputs of the output transistors so that a larger current flows through the bonding wires than when the failure is not detected.

Semiconductor device

Provided are an input buffer, a semiconductor device and an engine control unit making it possible to execute fault diagnosis in real time. The input buffer includes a first comparator which compares a voltage of an input signal with a first reference voltage, a hysteresis circuit which generates a first high voltage side or low voltage side reference voltage on the basis of a comparison result from the first comparator, a second comparator which compares the voltage of the input signal with a second reference voltage, and a hysteresis circuit which outputs a second high voltage side reference voltage which is higher than the first high voltage side reference voltage or a second low voltage side reference voltage which is lower than the first low voltage side reference voltage.

Growing community of inventors

Tokyo, Japan

Naohiro Yoshimura