Renesas Electronics Corporation

Renesas Technology Corp.

Naohiro Makihira

Jun Matsuhashi

Akio Hasebe

Yoshinori Deguchi

Bunji Yasumura

Hidekazu Iwasaki

Toshitsugu Ishii

Mitsuyuki Kubo

Fumikazu Takei

Masanao Sato

Satoshi Imasu

A semiconductor device is manufactured at an improved efficiency. The method of the invention includes a step of carrying out an electrical test by bringing an external terminal electrically coupled to a semiconductor chip mounted on a semiconductor device into contact with a tip portion of a probe pin coupled to a test circuit and thereby electrically coupling the semiconductor chip to the test circuit. The probe pin has a tip portion comprised of a base material, a nickel film formed thereon, and a conductive film formed thereon and made of silver. The conductive film is thicker than the nickel film.

Method of manufacturing semiconductor device

To improve the assemblability of a semiconductor device. When a memory chip is mounted over a logic chip, a recognition range including a recognition mark formed at a back surface of the logic chip is imaged and a shape of the recognition range is recognized, alignment of a plurality of bumps of the logic chip and a plurality of projection electrodes of the above-described memory chip is performed based on a result of the recognition, and the above-described memory chip is mounted over the logic chip. At this time, the shape of the recognition range is different from any portion of an array shape of the bumps, as a result, the recognition mark in the shape of the recognition range can be reliably recognized, and alignment of the bumps of the logic chip and the projection electrodes of the above-described memory chip is performed with high accuracy.

Method for manufacturing semiconductor device

The present invention is directed to improve reliability of a semiconductor device. A semiconductor device manufacturing method includes: (a) a step of attaching a BGA having a solder ball to a socket for a burn-in test; and (b) a step of performing a burn-in test of the BGA by sandwiching the solder ball by conductive contact pins in the socket. The contact pin in the socket has a first projection part which is conductive and extends along an attachment direction of the BGA and a second projection part which is conductive, provided along a direction crossing the extension direction of the first projection part, and placed so as to face the surface on the attachment side of the BGA of the solder ball. In the step (b), a burn-in test of the BGA is performed in a state where the first projection parts in the contact pins are in contact with the solder ball.

Semiconductor device manufacturing method and semiconductor device

This invention enhances reliability of an electrical test. A semiconductor device manufacturing method in which a potential (first potential) is supplied by bringing a plurality of first and second test terminals into contact with a plurality of leads, respectively in the step of supplying the potential to the leads (first leads) to carry out the electrical test. The first test terminals come into contact with the leads, individually, and the second test terminals come into contact with the leads in one batch.

Semiconductor device manufacturing method

Improvement in yield of a semiconductor device is obtained. In addition, increase in service life of a socket terminal is obtained. A projecting portion PJand a projecting portion PJare provided in an end portion PU of a socket terminal STE. Thus, it is possible to enable contact between a lead and the socket terminal STE in which a large current is caused to flow, at two points by a contact using the projecting portion PJand by a contact using the projecting portion PJ, for example. As a result, the current flowing from the socket terminal STEto the lead flows by being dispersed into a path flowing in the projecting portion PJand a path flowing in the projecting portion PJ. Accordingly, it is possible to suppress increase of temperature of a contact portion between the socket terminal STEand the lead even in a case where the large current is caused to flow between the socket terminal STEand the lead.

Method of manufacturing a semiconductor device and inspecting an electrical characteristic thereof using test socket terminals

Method of manufacturing a semiconductor device and inspecting an electrical characteristic thereof using socket terminals

The reliability of multipoint contact by a contact pin with an external terminal is improved while achieving an improvement in easiness of manufacture of the contact pin. The contact pin includes first and second contact pins. Further, the first contact pin has a support portion extending in a y direction and a tip portion connected to the support portion. The second contact pin also has a support portion extending in the y direction and a tip portion connected to the support portion. Here, the support portion of the first contact pin and the support portion of the second contact pin are arranged side by side along an x direction in a horizontal plane (xy plane). Further, the tip portion of the second contact pin is shifted from the tip portion of the first contact pin along the y direction in the horizontal plane, crossing (perpendicular to) the x direction.

Provided is a method of manufacturing a semiconductor device including a step of testing every one of through-electrodes. A second probe test is conducted to check an electrical coupling state between a plurality of copper post bumps formed on the side of the surface of a wafer and electrically coupled to a metal layer and a plurality of bumps formed on the side of the back surface of the wafer and electrically coupled to the metal layer (also another metal layer) via a plurality of through-electrodes by probing to each of the bumps on the side of the back surface while short-circuiting between the copper post bumps (electrodes). By this test, conduction between the bumps (electrodes) on the back surface side is checked.

To improve the reliability in an electric inspection of a semiconductor device. When a movable pedestalis being positioned relative to an arrangement direction of a plurality of second contact pinsby a positioning pinwhich a socketincludes, a substrate conduction test is performed by bringing a first contact pininto contact with a pre-stack landof a wiring substrateand of the a lower packageand moreover bringing the second contact pininto contact with a solder ball, and thus the electric inspection can be performed by precisely positioning the first contact pinside and the second contact pinside. Then, the reliability of the electric inspection can be improved.

Manufacturing method of semiconductor device

A burn-in process for a semiconductor integrated circuit device includes a first process of positioning bump electrodes of the semiconductor integrated circuit device with respect to pads of a socket having detachment mechanisms, a second process of pressing the bump electrodes against the pads by weighting the semiconductor integrated circuit device, and a third process of detaching the bump electrodes from the pads by exerting force on the semiconductor integrated circuit device in a direction opposite to a weighting direction of the second process. Automatic insertion and detachment of a semiconductor integrated circuit chip in a burn-in test is facilitated by detaching the bump electrodes from the pads by pushing up the semiconductor integrated circuit device.

Growing community of inventors

Kanagawa, Japan

Naohiro Makihira