Other

Asahi Kasei Kogyo Kabushiki Kaisha

Asahi Kasei Microdevices Corporation

Asahi Kasei Kabushiki Kaisha

Asahi Kasei Emd Corporation

Naohiro Kuze

Kazuhiko Yamanouchi

Yoshihiko Shibata

Kazuhiro Nagase

Yasuhito Kanno

Koichiro Ueno

Ichiro Shibasaki

Hiroyuki Odagawa

Yoshitaka Moriyasu

Tatsuro Iwabuchi

Wasuke Sato

Seiichi Tokuo

Hiromasa Goto

Yoshinori Yanagita

The present invention relates to a quantum infrared sensor and a gas concentration meter using the same, the quantum infrared sensor having a small and simple device shape and also being capable of performing stable measurement against disturbance changes such as changes in the flow amount and the temperature of gas to be measured. The quantum infrared sensor includes a pair of quantum infrared sensor elements, a pair of optical filters and a holding frame. The pair of optical filters is provided closer to an infrared light source than is the pair of quantum infrared sensor elements. The pair of optical filters is configured to selectively transmit infrared rays in specific different wavelength ranges, respectively. The pair of optical filters is housed in an upper level of the holding frame and provided while facing the pair of quantum infrared sensor elements through a pair of through holes, respectively.

Quantum infrared sensor and quantum infrared gas concentration meter using the same

Provided is an infrared light emitting device in which dark current and diffusion current caused by thermally excited holes are suppressed. Thermally excited carriers (holes) generated in a first n-type compound semiconductor layer () tend to diffuse in the direction of a &#x3c0; layer (). But, the dark current by holes is reduced by providing an n-type wide band gap layer () with a larger band gap than the first layer () and the &#x3c0; layer () that suppresses the hole diffusion between the first layer () and the &#x3c0; layer (). The wide band gap layer () has a band gap shifted relatively to valence band direction by n-type doping and thereby more effectively functions as a diffusion barrier for the thermally excited holes. Namely, the band gap and n-type doping of the wide band gap layer () are adjusted to suppress diffusion of the thermally excited carriers.

Infrared light emitting device

An infrared sensor IC and an infrared sensor, which are extremely small and are not easily affected by electromagnetic noise and thermal fluctuation, and a manufacturing method thereof are provided. A compound semiconductor that has a small device resistance and a large electron mobility is used for a sensor (), and then, the compound semiconductor sensor () and an integrated circuit (), which processes an electrical signal output by the compound semiconductor sensor () and performs an operation, are arranged in a single package using hybrid formation. In this manner, an infrared sensor IC that can be operated at room temperature can be provided by a microminiature and simple package that is not conventionally produced.

Infrared sensor IC, and infrared sensor and manufacturing method thereof

A surface acoustic wave element includes a LiNb,Ta,O,('x' is 0 or more and 1 or less) film on a (,) sapphire substrate, in which a Love wave is propagated as a surface acoustic wave in a specific direction of the LiNb,Ta,O,film. Preferably, a crystal axis of the sapphire substrate and a crystal axis of a (,) LiNb,Ta,O,film ('x' is 0 or more and 1 or less) are parallel to each other; a surface acoustic wave propagation direction is within a range of &plusmn;20 degrees around an axis vertical to a C-axis projection line direction of a crystal axis of the sapphire substrate or the (,) LiNb,Ta,O,film. Alternatively, a C-axis projection line direction of a crystal axis of the sapphire substrate and a C-axis direction of a crystal axis of a (,) LiNb,Ta,O,film (&lsquo;x&rsquo; is 0 or more and 1 or less) are parallel to each other, and the surface acoustic wave propagation direction is within a range of &plusmn;35 degrees around an axis vertical to a C-axis projection line direction of a crystal axis of the sapphire substrate. A piezoelectric substrate preferably has an intermediate layer including of a metal or a metal oxide between the sapphire substrate and the (,) LiNb,Ta,O,(&lsquo;x&rsquo; is 0 or more and 1 or less).

Surface acoustic wave functional wave

A surface acoustic wave functional element is provided that includes a piezoelectric substrate or a multilayer piezoelectric substrate having a large electromechanical coupling coefficient. Semiconductor layers are formed on the piezoelectric substrate. The semiconductor layers include an active layer and a buffer layer. The buffer layer is formed of a structure that has a lattice constant that is the same as or similar to that of the active layer. In addition, input and output electrodes are formed on both sides of the semiconductor layers. The surface acoustic wave functional element attains a large amplification gain at low voltage, and can be used as part of a transmitting/receiving circuit in a high frequency portion of a mobile communication device.

Surface acoustic wave element and electronic circuit using the same

The surface acoustic wave functional element comprises a semiconductor layer provided on a piezoelectric substrate or a piezoelectric film substrate and makes use of interaction between a surface acoustic wave propagating on the substrate and electrons in the substrate layer, but has the semiconductor layer disposed outside above the propagation path for propagating a surface acoustic wave, comprises a plurality of grating electrodes perpendicularly above and to the propagation path and moreover the semiconductor layer comprises an active layer and a buffer layer lattice-matching thereto. By use of this surface acoustic wave functional element, a surface acoustic wave amplifier capable of providing a high amplification gain at a practical low voltage, a surface acoustic wave convolver having a higher efficiency than ever or the like are offered.

Surface acoustic wave functional device

Elastic surface wave functional device and electronic circuit using the

Semiconductor sensors and method for fabricating the same

Growing community of inventors

Fuji, Japan

Naohiro Kuze