Hitachi High-Tech Corporation

Naohiro Kawamoto

Tatehito Usui

Atsushi Sekiguchi

Shigeru Nakamoto

Miyako Matsui

Tsubasa Okamoto

A plasma processing apparatusthat performs, on a waferin which a multilayer film in which an insulating film and a film to be processed containing a metal are alternately laminated is formed on a substrate, plasma etching of the film to be processed, includes: a processing chamberwhich is disposed inside a vacuum container; a sample stagewhich is disposed inside the processing chamber and on which the wafer is placed; a detection unitwhich detects reflected light obtained by the wafer reflecting light emitted to the wafer; a control unitwhich controls plasma processing on the wafer; and an end point determination unitwhich determines an etching end point of the film to be processed based on a change in an amplitude of vibration in a wavelength direction of a light spectrum of the reflected light, and the control unit receives determination of the end point made by the end point determination unit and stops the plasma processing on the wafer.

Growing community of inventors

Tokyo, Japan

Naohiro Kawamoto