Kabushiki Kaisha Toshiba

Naohiko Oyasato

Rumiko Hayase

Yasunobu Onishi

Hirokazu Niki

Kazuo Sato

Shuzi Hayase

Yoshihiko Nakano

Naoko Kihara

Yoshihito Kobayashi

Shigeru Matake

Kenji Chiba

Masayuki Oba

Yukihiro Mikogami

Toshimitsu Kumazawa

Kei Takano

Takao Hayashi

Hiromitsu Wakabayashi

Masao Koyama

Kouichi Teshima

Masataka Miyamura

Akitoshi Kumagae

Tomiaki Furuya

Terunobu Hayata

Fuminobu Tezuka

Teruhisa Ogihara

Yoshiaki Yokoyama

Tomohiro Todoroki

Kaichiro Ogihara

A design support apparatus includes an evaluation unit that evaluates a recyclability of the product, using evaluation condition and parts/material data, an analysis unit that analyzes a factor obstructing the recyclability based on an evaluation result of the evaluating unit, and a display unit that displays a remedy against an obstruction factor provided as an analysis result of the analysis unit.

Evaluation support apparatus and method for evaluation of recyclability/environmental load

A processing apparatus capable of separating and recovering resins and metals, respectively, from an object being processed, which has resins and metals as its constituent, comprises a first gastight area (,), in which temperature and pressure are regulated so as to permit selective thermal decomposition of resins from the object (,) being processed, a second gastight area (,), which is partitioned from the first gastight area by an openable and closeable partition (,C) and in which temperature and pressure are regulated so as to permit selective vaporization of metals from the object, first recovering chamber (,) connected to the first gastight area for recovering gases produced by thermal decomposition of resins, and second recovering chamber (,) connected to the second gastight area for recovering vaporized metals.

Processing apparatus, processing system and processing method

A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, ##STR1## wherein R.sup.1 is hydrogen atom or methyl group, R.sup.2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03.ltoreq.n/(m+n).ltoreq.1, (b) a compound capable of generating an acid when irradiated with light, and (c) 4-phenylpyridine, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000.ltoreq.Mw.ltoreq.50,000, 1.10.ltoreq.Mw/Mn.ltoreq.2.50 (Mw and Mn respectively represent value converted in styrene).

Resist composition for forming a pattern and method of forming a pattern

A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, ##STR1## wherein R.sup.1 is hydrogen atom or methyl group, R.sup.2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03.ltoreq.n/(m+n).ltoreq.1, (b) a compound capable of generating an acid when irradiated with light, and (c) a nitrogen-containing compound, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000.ltoreq.Mw.ltoreq.50,000, 1.10.ltoreq.Mw/Mn.ltoreq.2.50 (Mw and Mn respectively represent value converted in styrene).

Resist composition for forming a pattern comprising a pyridinium

Disclosed is a photosensitive resin composition, containing a polyamic acid derivative having a repeating unit represented by general formula (1) given below and a photosensitive agent: ##STR1## where, R.sup.1 represents a tetravalent organic group, R.sup.2 represents a divalent organic group, and R.sup.3 and R.sup.4 represent a monovalent organic group, at least one of R.sup.3 and R.sup.4 being an organic group having at least on hydroxyl group bonded to an aromatic ring. A semiconductor substrate is coated with the photosensitive resin composition, followed by exposing the coated film to light through a patterning mask and subsequently applying a development and a heat treatment so as to form a polyimide film pattern. A baking treatment also be applied immediately after the exposure step. The photosensitive resin composition of the present invention performs the function of a positive or negative photoresist film and the function of a polyimide protective film on a semiconductor substrate.

Method of forming polyimide film pattern

Disclosed herein is a resist for forming patterns, which is greatly sensitive to ultraviolet rays an ionizing radiation, and which can therefore form a high-resolution resist pattern if exposed to ultra violet rays or an unionizing radiation. Hence, the resist is useful in a method of manufacturing semicon ductor devices having high integration densities. The resist comprises tert-butoxycarbonyl methoxypolyhydroxy styrene and an o-quinonediazide compound.

Resist for forming patterns comprising an acid generating compound and a

Photosensitive resin composition for forming polyimide film pattern

A radiation-sensitive layer comprising as a main component a radiation-sensitive composition containing a compound capable of generating an acid when exposed to a chemical radiation and a compound having at least one linkage decomposable by an acid is formed on a substrate. An acidic coating layer is formed on the radiation-sensitive layer. The radiation-sensitive layer and the acidic coating layer are pattern-exposed to a chemical radiation. The radiation-sensitive layer and the acidic coating layer are baked and developed by using an aqueous alkaline solution to obtain a pattern comprising lines and spaces, each having a predetermined width. A fine pattern of a rectangular sectional shape can be formed without producing eaves caused by a surface inhibition layer layer, which is produced on the film surface.

Pattern forming method including the formation of an acidic coating

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Kawaguchi, Japan

Naohiko Oyasato