Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Renesas Technology Corp.

Hitachi, Ltd.

Sanyo Electric Co., Ltd.

Sony Corporation

Renesas Electronics Corporation

Hiatchi Kokusai Electric, Inc.

Naofumi Ohashi

Tadashi Takasaki

Shun Matsui

Nobuo Owada

Junji Noguchi

Toshiyuki Kikuchi

Hizuru Yamaguchi

Toshinori Imai

Yoshio Homma

Seiichi Kondo

Tatsuyuki Saito

Teruo Yoshino

Kenichi Takeda

Kazuyuki Toyoda

Takashi Yahata

Kenji Hinode

Yasuhiro Mizuguchi

Yukinori Aburatani

Satoshi Takano

Hideharu Itatani

Hizuru Yamaguchii

Yoshiro Hirose

Noriyuki Sakuma

Tsuyoshi Takeda

Hiroshi Ashihara

Satoshi Shimamoto

Masanori Nakayama

Kaori Misawa

Tetsuaki Inada

Atsuhiko Suda

Tsuyoshi Tamaru

Takafumi Sasaki

Isao Matsumoto

Takashi Nakagawa

Tetsuo Yamamoto

Kazuhiro Morimitsu

Katsuhiko Yamamoto

Toshiro Koshimaki

Keita Ichimura

Ryuji Yamamoto

Eisuke Nishitani

Tsukasa Kamakura

Yukitomo Hirochi

Hidehiro Yanai

Tatsushi Ueda

Yuichi Wada

Yoshihiko Yanagisawa

Shin Hiyama

Tomihiro Amano

Mitsuro Tanabe

Atsushi Matsushita

Kazuaki Inukai

Hong Jae Shin

Junichi Tanabe

Yuki Taira

Koichi Abe

Takeshi Taniguchi

Shuji Sone

Haruaki Sakurai

There is provided a technique capable of improving a uniformity of a substrate processing on a substrate surface. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate processing room; a plasma generation room; a gas supplier supplying a gas into the plasma generation room; a first coil surrounding the plasma generation room and to which an electric power is supplied; and a second coil surrounding the plasma generation room and to which an electric power is supplied. An axial direction of the second coil is equal to that of the first coil, a winding diameter of the second coil is different from that of the first coil, and a peak of a voltage distribution generated by supplying the electric power to the second coil does not overlap with a peak of a voltage distribution generated by the first coil.

Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device, and non-transitory computer-readable recording medium

There is provided a technique that includes: a process container processing one or more substrates; a support installed inside the process container and supporting the substrates; a first gas supplier capable of supplying gas in the process container; a second gas supplier capable of supplying in the process container; an exhaust buffer structure installed along outer circumference of the support; a third gas supplier capable of supplying first cleaning gas to the exhaust buffer structure; a fourth gas supplier capable of supplying second cleaning gas onto the support; and a controller configured to control the third and fourth gas suppliers to control a frequency or number of times for supplying each of the first and the second cleaning gas, or a supply time of each of the first and second cleaning gases, such that over-etching in the exhaust buffer structure or in the support is prevented.

Substrate processing apparatus with cleaning of exhaust system

Described herein is a technique capable of reducing an amount of moisture in a low temperature region in a substrate processing apparatus provided with a transfer chamber. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber provided with a heater; a load lock chamber; a transfer chamber provided between the process chamber and the load lock chamber and including a first region provided adjacent to the process chamber and a second region provided more adjacent to the load lock chamber than the first region and whose temperature is lower than a temperature of the first region; a detector capable of detecting an amount of moisture in the transfer chamber; and an inert gas supplier capable of supplying an inert gas toward the second region in the transfer chamber.

Substrate processing apparatus

There is provided a technique that includes: receiving type information corresponding to substrate processing; reading the type information and processing time information corresponding to the type information from a memory; calculating a ratio of a processing time of a predetermined process to a total time of the processing time information; selecting one or more reactors according to the ratio; setting the one or more reactors to be capable of performing the predetermined process; transferring a substrate corresponding to the type information to the one or more reactors; and performing the predetermined process corresponding to the type information in the one or more reactors.

Method of processing substrate, substrate processing apparatus, recording medium, and manufacturing semiconductor device

Some embodiments of the present disclosure provide a technique capable of reducing an amount of deposits on a back surface of a rotary table. According to one aspect thereof, there is provided a technique that includes: a process chamber provided with process regions; a rotary table configured to rotate a substrate about a point outside the substrate such that the substrate sequentially passes through the process regions; and a rotator configured to rotate the rotary table, wherein the process regions include: a first region in which a process gas is supplied; and a second region in which an inert gas is supplied, and wherein a space corresponding to the second region below the rotary table is configured such that a pressure at the space corresponding to the second region below the rotary table is higher than a pressure at a space corresponding to the first region below the rotary table.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

There is provided a technique that includes abnormality detecting by picking up a sound generated from a transfer configured to operate in a vacuum and transport a substrate in a vacuum transfer chamber and compare the sound information with a preset threshold value to detect an abnormality of the transfer. The transfer includes a gas-filled container arranged in the vacuum transfer chamber and filled with a gas and a microphone installed inside the gas-filled container.

Method of processing substrate, substrate processing apparatus, method of manufacturing semiconductor processing apparatus, and recording medium

There is provided a technique that includes adjusting a pressure of each of a plurality of process chambers, by adjusting an opening degree of a pressure-adjusting valve included in a common gas exhaust pipe, which is connected to a plurality of process chamber exhaust pipes and is disposed to merge respective process chamber exhaust pipes on a downstream side of the plurality of process chamber exhaust pipes, to a predetermined opening degree and by exhausting an atmosphere of each of the process chambers from the plurality of process chamber exhaust pipes and the common gas exhaust pipe while supplying an inert gas to the plurality of process chambers; processing a substrate in each of the process chambers; and detecting a fluctuation of pressures in the process chamber exhaust pipes by measuring, by one or more pressure detectors, the pressures of the process chamber exhaust pipes.

Method of manufacturing semiconductor device

Described is a technique capable of optimizing a timing of a maintenance process. According to one aspect, there is a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing substrate processing; (b) receiving maintenance reservation information of the process chamber; (c) continuously performing the substrate processing related to the received maintenance reservation information, stopping a next substrate from being transferred into the process chamber after the substrate processing is completed, and thereafter setting the process chamber to the maintenance enable state; (d-1) receiving an instruction of advancing or delaying the maintenance timing within a predetermined range; and (d-2) starting the next substrate processing without setting the process chamber to the maintenance enable state when the instruction of delaying the maintenance timing is received in (d-1), and terminating the substrate processing when the instruction of advancing the maintenance timing is received in (d-1).

Processing method, method of manufacturing semiconductor, and substrate processing apparatus

There is provided technique that includes (a) adsorbing a first adsorption inhibitor to a first portion of a substrate by supplying the first adsorption inhibitor to the substrate at a first temperature; (b) after (a), forming a film on a second portion of the substrate by supplying a processing gas to the substrate at a second temperature; (c) after (b), removing at least a part of the first adsorption inhibitor, which is adsorbed to the substrate, at a third temperature higher than the second temperature; (d) after (c), supplying a second adsorption inhibitor to the substrate at a fourth temperature; (e) after (d), supplying the processing gas to the substrate at the second temperature higher than the fourth temperature; and (f) after (e), removing at least a part of the second adsorption inhibitor, which is adsorbed to the substrate, at the third temperature higher than the second temperature.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique capable of preventing a diffusion of a film-forming gas through a through-hole. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate mounting table; through-holes at the substrate mounting table; lift pins; an elevator capable of elevating or lowering the substrate mounting table or the lift pins or both; and a controller capable of controlling the elevator so as to perform: (a) placing a substrate on the lift pins protruding from a surface of the substrate mounting table through the through-holes; (b) placing the substrate on the surface of the substrate mounting table by moving the substrate mounting table or the lift pins or both; (c) stopping the substrate mounting table at a substrate processing position; and (d) moving the lift pins to positions in the through-holes at which the lift pins are out of contact with the substrate.

Substrate processing apparatus, substrate processing method, non-transitory computer-readable recording medium and method of manufacturing semiconductor device

A substrate processing technique includes a substrate mounting table including a substrate mounting surface for a substrate; a process container for accommodating the substrate mounting table and forming a process chamber for processing the substrate mounted on the substrate mounting surface; at least one gas supplier for suppling a processing gas to the process chamber; a first wall arranged on an outer peripheral side of the at least one substrate mounting table; a second wall arranged at an outer side of the first wall on the outer peripheral side of the substrate mounting table; at least one exhaust flow path formed between the first wall and the second wall and configured to discharge a gas in the process chamber; and a shield plate arranged below the substrate mounting table and extending at least to a lower side of a lower end of the second wall.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

There is provided a technique that includes a load port on which a plurality of storage containers, each storage container storing a plurality of substrates, are mounted, a plurality of process chambers configured to be capable of accommodating the substrates, a transfer part configured to transfer the substrates stored in each storage container to each of the process chambers; an operation part configured to, when performing the process in a state in which a substrate is not present in each process chamber, count first count data of data tables for corresponding process chambers; a memory configured to store the data tables; and a controller configured to assign first transfer flag data to a data table of a process chamber having largest first count data and configured to control the transfer part based on the first transfer flag data so as to transfer the substrates in the predetermined order.

Described herein is a technique capable of suppressing generation of particles by removing by-products in a groove of a high aspect ratio. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; and a substrate support provided in the process chamber and including a plurality of supports where the substrate is placed, wherein the process chamber includes a process region where a process gas is supplied to the substrate and a purge region where the process gas above the substrate is purged, and the purge region includes a first pressure purge region to be purged at a first pressure and a second pressure purge region to be purged at a second pressure higher than the first pressure.

Substrate processing apparatus, substrate processing method and non-transitory computer-readable recording medium therefor

Growing community of inventors

Toyama, Japan

Naofumi Ohashi