Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Naofumi Hirata

Yoichi Hori

Kei Tanihira

Tomomi Kuraguchi

Shinichi Ueki

A semiconductor device includes a semiconductor part including a first semiconductor layer of a first conductivity type; a first electrode provided on a back surface of the semiconductor part; and a second electrode provided on a front surface of the semiconductor part. The second electrode includes a barrier layer and a metal layer. The barrier layer contacts the first semiconductor layer and including vanadium or a vanadium compound as a major component. The metal layer is provided on the barrier layer.

Growing community of inventors

Himeji Hyogo, Japan

Naofumi Hirata