Stanley Electric Co., Ltd

Air Water Inc.

Naochika Horio

Hiroyuki Kato

Masahiko Tsuchiya

Michihiro Sano

Akio Ogawa

Hiroshi Kotani

Tomofumi Yamamuro

Munehiro Kato

Satoshi Tanaka

Masayuki Makishima

Kenichi Morikawa

Chizu Kyotani

Hitoshi Tamura

Koji Ichikawa

Tatsuma Saito

Yoshiaki Nakazato

Kazufumi Tanaka

Takashi Yokoyama

Keima Kono

Satoshi Okada

Philip Rackow

Daizo Kambara

Toru Inagaki

Takahiro Shirahata

A semiconductor light emitting device includes a semiconductor light emitting laminate, and an SOI substrate including an upper semiconductor layer, an interlayer insulating film, and a lower semiconductor layer. The SOI substrate includes a first wiring electrode provided on the upper semiconductor layer through an insulating film and corresponding to a p-electrode, a second wiring electrode connected to the upper semiconductor layer and corresponding to an n-electrode, an anode that is provided on the lower semiconductor layer and connected to a first wiring electrode by a first via electrode passing through the SOI substrate, a cathode that is provided on the lower semiconductor layer through an insulating film and connected to the upper semiconductor layer by a second via electrode reaching the upper semiconductor layer. The p-electrode and the n-electrode are respectively bonded to the first wiring electrode and the second wiring electrode.

Semiconductor light emitting device and supporting substrate for semiconductor light emitting elements

A vehicle lighting fixture can eliminate the use of a phosphor member that causes the reduced color rendering properties and the occurrence of color separation, specifically, can enhance the color rendering properties and suppress the occurrence of color separation more than a conventional white light source that use a semiconductor light emitting element such as an LD and a phosphor member (wavelength converting member). The vehicle lighting fixture includes: a supercontinuum light source configured to output supercontinuum light containing light in a visible wavelength region, and an optical system configured to control the supercontinuum light output from the supercontinuum light source.

Vehicle lighting fixture

Disclosed is a method of manufacturing a ZnO-based semiconductor device having at least p-type ZnO-based semiconductor layer, which includes a step of forming a contact metal layer on the p-type ZnO-based semiconductor layer wherein the contact metal layer contains at least one of Ni and Cu; and a step of performing heat treatment of the contact metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer including elements of the p-type ZnO-based semiconductor layer and the contact metal layer at a boundary region therebetween while maintaining a metal phase layer on a surface of the contact metal layer.

Method of manufacturing a zinc oxide (ZnO) based semiconductor device including performing a heat treatment of a contact metal layer on a p-type ZnO semiconductor layer in a reductive gas atmosphere

A method which has a step of growing a thermostable-state ZnO-based single crystal on a ZnO single crystal substrate at a growth temperature that is equal to or greater than 600&#xb0; C. and less than 900&#xb0; C. by using a metalorganic compound containing no oxygen and water vapor based on an MOCVD method.

Method for growing zinc-oxide-based semiconductor device and method for manufacturing semiconductor light emitting device

A method includes the steps of, using water vapor and a metalorganic compound not containing oxygen, (a) performing crystal growth at a low growth temperature and at a low growth pressure in the range of 1 kPa to 30 kPa to form a low-temperature grown single-crystal layer; and (b) performing crystal growth at a high growth temperature and at a pressure higher than the low growth pressure to form a high-temperature grown single-crystal layer on the low-temperature grown single-crystal layer.

Method of growing zinc-oxide-based semiconductor and method of manufacturing semiconductor light emitting device

A method which has a low-temperature growth step of growing a buffer layer of a ZnO-based single crystal on the substrate at a growth temperature in the range of 250&#xb0; C. to 450&#xb0; C. using a polar oxygen material and a metalorganic compound containing no oxygen; performing a heat treatment of the buffer layer to effect a transition of the buffer layer to a thermostable-state single crystal layer; and a high-temperature growth step of growing the ZnO-based single crystal layer on the thermostable-state single crystal layer at a growth temperature in the range of 600&#xb0; C. to 900&#xb0; C. using a polar oxygen material and a metalorganic compound containing no oxygen.

The ohmic contact between a growth substrate and an electrode formed thereon is improved in a zinc oxide-based semiconductor light-emitting device, thereby improving the light-emission efficiency and reliability A step for forming an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in sequence on a first principal face of a substrate having a composition of MgZnO (0&#x2266;x&#x2266;0.68); a step for forming microcracks in a second principal face of the substrate so as to extend toward an interior of the substrate; a step for carrying out a heat treatment at a temperature of 100&#xb0; C. or higher; and a step for forming an electrode by depositing a metal material composed of one among Al, a Ga alloy, and an In alloy on the second principal face of the substrate, and forming an electrode in a heat treatment at a temperature of 300&#xb0; C. to 1000&#xb0; C. are provided.

Method for producing zinc oxide-based semiconductor light-emitting device and zinc oxide-based semiconductor light-emitting device

A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device

A semiconductor device that has excellent characteristics and mass productivity wherein the introduction of defects thereinto at the time of device separation is prevented, and a method for producing the semiconductor device. In particular, there is provided a high-performance semiconductor device having excellent luminous efficiency, longevity and mass productivity; and a method for producing this semiconductor device. The method for producing the semiconductor device has a step of forming, between a substrate comprising zinc oxide (ZnO) and a device operating layer, a defect-blocking layer having a crystal composition that is different from that of the substrate, and a step of forming device dividing grooves to a depth that goes beyond the defect-blocking layer, relative to the device operating layer side surface of the substrate on which the device operating layer is formed.

Zinc oxide-based semiconductor device and method for producing same

A manufacture method for a ZnO-based light emitting device, includes the steps of: forming a ZnO-based semiconductor layer of a first conductivity type above a substrate; two-dimensionally growing a first ZnO-based semiconductor layer of a second conductivity type opposite to the first conductivity type above the ZnO-based semiconductor layer of the first conductivity type; and three-dimensionally growing a second ZnO-based semiconductor layer of the second conductivity type on the first ZnO-based semiconductor layer of the second conductivity type.

Manufacture method for ZnO-based light emitting device

A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn&#x2014;Si&#x2014;O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.

ZnO based semiconductor device and its manufacture method

A ZnO-based semiconductor light emitting element includes a ZnO-based semiconductor layer formed on a rectangular sapphire A-plane substrate having a principal surface lying in the A-plane {11-20}. The substrate has a thickness of 50 to 200 &#x3bc;m and is surrounded by two parallel first side edges forming an angle in a range of 52.7&#xb0; to 54.7&#xb0; with respect to the m-axis orthogonal to the c-axis and two parallel second side edges orthogonal to the first side edges. The light emitting element is obtained by: forming, on a surface of the sapphire A-plane substrate opposite to the surface on which the ZnO-based semiconductor layer is formed, first scribed grooves forming an angle in a range of 52.7&#xb0; to 54.7&#xb0; with respect to the m-axis and second scribed grooves orthogonal to the first scribed grooves; and breaking the substrate along the first scribed grooves and then along the second scribed grooves.

Semiconductor light emitting element and method for manufacturing the same

A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer made of ZnO based compound semiconductor is formed on the first substrate. A p-side conductive layer is formed on the lamination structure. A first eutectic material layer made of eutectic material is formed on the p-side conductive layer. A second eutectic material layer made of eutectic material is formed on a second substrate. The first and second eutectic material layers are eutectic-bonded to couple the first and second substrates. After the first substrate is optionally thinned, an n-side electrode is formed on a partial surface of the first substrate.

Semiconductor light emitting device manufacture method

A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.

ZnO-containing semiconductor layer, its manufacture method, and semiconductor light emitting device

A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

Growing community of inventors

Tokyo, Japan

Naochika Horio