Hitachi, Ltd.

Yahoo Japan Corporation

Fujifilm Healthcare Corporation

Naoaki Yamashita

Yasuhiro Yoshimura

Tatsuya Nagata

Shuntaro Machida

Daisuke Ryuzaki

Akifumi Sako

Taiichi Takezaki

Hiroki Tanaka

Tomohiro Tanaka

Yuko Hanaoka

A capacitive micromachined ultrasonic transducerA includes: a silicon substratean insulating filmformed over the silicon substratea lower electrode; insulating filmsanda cavityconstituted by a void formed in a portion of the insulating filman upper electrodeinsulating filmsandand a protective filmIn addition, the insulating filmupper electrodeinsulating filmand insulating filmabove the cavityconfigure a vibration filmand the protective filmabove the vibration filmis divided into a plurality of isolated patterns regularly arranged with a gaphaving a constant spacing formed therebetween.

Capacitive micromachined ultrasonic transducer and ultrasonic imaging apparatus using the same

The present invention addresses the problem of enlarging a sensing area in an ultrasonic probe so as to achieve a higher definition. This ultrasonic diagnostic equipment is provided with an ultrasonic probe that comprises: a CMUT chip () that has drive electrodes ()-(), etc., arranged in a grid-like configuration on a rectangular CMUT element section (); and a CMUT chip () that has drive electrodes ()-(), etc., arranged in a grid-like configuration on the rectangular CMUT element section (), that is adjacent to the CMUT chip (), and in which the drive electrodes ()-() of the adjacent CMUT chip () are electrically connected to the respective drive electrodes ()-() via bonding wires ()-(), etc.

Semiconductor sensor chip, semiconductor sensor chip array, and ultrasound diagnostic apparatus

A structure that prevents a substrate from being warped is provided on a region or a location other than a membrane that determines the characteristics of a CMUT. In a CMUT in a structure in which a first conductive layer and a second conductive layer are provided sandwiching a cavity on a substrate, for example, as a warpage prevention structure, a warpage prevention layer that prevents the substrate from being warped is provided between the substrate and the first conductive film. When the insulating film disposed between the cavity and the first conductive film and the insulating film disposed between the cavity and the second conductive film are silicon oxide films, the warpage prevention layer includes a silicon nitride film.

Ultrasonic transducer, method for making same, ultrasonic transducer array, and ultrasonic test apparatus

A generating apparatus according to an embodiment of the present application includes an obtaining unit and a generating unit. The obtaining unit obtains intermediate images in an intermediate layer of a neural network that recognizes the quantity of objects contained in an image. The generating unit generates a combination image by combining together the intermediate images obtained by the obtaining unit. For example, the generating unit generates the combination image by combining together the intermediate images to which a weight has been applied on the basis of a change in the recognition of the quantity of objects corresponding to a process applied to each of the intermediate images.

Generating apparatus, generating method, and non-transitory computer readable storage medium

Both controlling damage when assembling an ultrasonic probe using a chip formed with a capacitive ultrasonic transducer and securing operational reliability are achieved. In a semiconductor substrate on which the capacitive ultrasonic transducer (CMUT) is formed on a first primary surface, a protective film is formed on the surface of the ultrasonic transducer which is formed on the first primary surface of the semiconductor substrate which is then thinned by polishing a second primary surface opposite to the first primary surface of the semiconductor substrate, an ultrasonic transducer chip is cutout of the semiconductor substrate, a sound absorbing material is provided on the surface opposite to the surface formed with the ultrasonic transducer, and the protective film formed on the surface of the ultrasonic transducer is removed.

Growing community of inventors

Tokyo, Japan

Naoaki Yamashita