Panasonic Intellectual Property Management Co., Ltd.

Naoaki Takeda

Toshihiro Wada

Shogo Okita

Takahiro Miyai

Yoshiyuki Wada

Toshiyuki Takasaki

Seiya Nagano

Disclosed is a plasma processing apparatusincluding: a chamber; a high-frequency power sourceconfigured to supply a high-frequency power for generating plasma in the chamber; a matcher connected to the high-frequency power source; a distributorconnected to the matcherand configured to distribute and output the high-frequency power supplied from the high-frequency power source; a first coiland a second coilconnected in parallel with each other, on an output side of the distributor; and a control unitconfigured to change a distribution ratio of the high-frequency power distributed between the first coiland the second coil. The control unitchanges the distribution ratio after a reflected wave power in the matcheris made equal to or less than a first threshold by the matcher

Plasma processing apparatus and plasma processing method

A disclosed plasma processing apparatusincludes: a chamberhaving an opening; a stagedisposed in the chamber, the stage for placing an object to be processed; a dielectric memberclosing the opening; and a plasma generation unitdisposed on the opposite side to the chamberwith reference to the dielectric member, and configured to, when applied with a high-frequency power, generate a plasma in the chamber. The plasma generation unithas a first coilincluding one or a plurality of first conductorsconnected in parallel with each other, and a second coildisposed so as to surround the first coiland including a plurality of second conductorsconnected in parallel with each other. The number of the second conductorsis greater than the number of the first conductors

Plasma processing apparatus

Disclosed is a plasma processing apparatusincluding a chamber, a stage, a dielectric member, a cover, a gas introduction path, and an induction coil. The induction coilincludes a first induction coilinstalled so as to overlap a central region Rof the dielectric member, and a second induction coilinstalled so as to overlap a peripheral region Routside the central region Rof the dielectric member. The coverhas a first gas holeformed at a position overlapping the central region Rand a second gas holeformed at a position overlapping the peripheral region R. The gas introduction pathhas a first gas introduction pathcommunicating with the first gas holeand a second gas introduction pathcommunicating with the second gas hole

Plasma processing apparatus and method for using plasma processing apparatus

A plasma processing apparatusincluding: a chamberhaving a dielectric window; a coilplaced outside the chamber so as to face the dielectric window; a FS electrodehaving a plate shape and placed on the chamber side of the coil; a first power sourcefor supplying a high-frequency power of a first frequency to the coil; a second power sourcefor supplying a high-frequency power of a second frequency which is different from the first frequency, to the FS electrode; a first matcherplaced between the first power source and the coil; a second matcherplaced between the second power source and the FS electrode; and a first frequency attenuation filter connected between the second matcher and the FS electrode, and configured to allow transmission of the high-frequency power of the second frequency and inhibit transmission of the high-frequency power of the first frequency.

Growing community of inventors

Osaka, Japan

Naoaki Takeda