Disco Corporation

Nao Hattori

Hiroshi Morikazu

Karl Heinz Priewasser

Frank Wei

A method of processing a substrate, having a first surface with at least one division line formed thereon and a second surface opposite the first surface, includes applying a pulsed laser beam to the substrate from the side of the first surface, at least in a plurality of positions along the at least one division line, so as to form a plurality of modified regions in the substrate, each modified region extending at least from the first surface towards the second surface. Each modified region is formed by melting substrate material by means of the pulsed laser beam and allowing the molten substrate material to resolidify. The method further comprises removing substrate material along the at least one division line where the plurality of modified regions has been formed.

Method of processing a substrate

A substrate has a first surface with at least one division line formed thereon and a second surface opposite the first surface. The substrate is processed by applying a pulsed laser beam from the side of the first surface. The substrate is transparent to the pulsed laser beam. The pulsed laser beam is applied at least in a plurality of positions along the at least one division line, a focal point of the pulsed laser beam located at a distance from the first surface in the direction from the first surface towards the second surface, so as to form a plurality of modified regions inside the substrate. Each modified region is entirely within the bulk of the substrate, without any openings open to the first surface or the second surface. Substrate material is removed along the at least one division line where the modified regions are present.

Substrate processing method

There is provided a dividing method for dividing a plate-shaped workpiece. The dividing method includes: a starting point region forming step of forming a starting point region serving as a starting point of division along a planned dividing line set on the workpiece; a heating step of heating the workpiece after performing the starting point region forming step; a cooling step of cooling the workpiece after performing the heating step; a dividing step of dividing the workpiece along the starting point region by applying a force to the workpiece after performing the cooling step; and a sheet affixing step of affixing an expanding sheet to the workpiece before performing the dividing step; the dividing step applying the force to the workpiece by expanding the expanding sheet.

Workpiece dividing method

A workpiece dividing method includes: a laser processing step of forming along each street a plurality of minute holes extending in a pulsed laser beam application direction; and a dividing step of pressing the streets by a pressing member to divide a wafer along the streets. The minute hole has one end opening at least one of a front surface and a back surface of the wafer and is decreased in diameter from the one end toward the other end. In the dividing step, the pressing member is pressed against that surface of the front surface and the back surface of the wafer at which the one end of the minute hole is not opening.

The invention relates to a method of processing a substrate, having a first surface with at least one division line formed thereon and a second surface opposite the first surface. The method comprises applying a pulsed laser beam to the substrate from the side of the first surface, at least in a plurality of positions along the at least one division line, so as to form a plurality of hole regions in the substrate, each hole region extending from the first surface towards the second surface. Each hole region is composed of a modified region and a space in the modified region open to the first surface. The method further comprises removing substrate material along the at least one division line where the plurality of hole regions has been formed.

Disclosed herein is a method of forming a gettering layer for capturing metallic ions on the back side of a semiconductor wafer formed with devices on the face side thereof. The method includes irradiating the back-side surface of the semiconductor wafer with a pulsed laser beam having a pulse width corresponding to a thermal diffusion length of 10 to 230 nm, to thereby form the gettering layer.

Method of forming gettering layer

A method for processing a workpiece including: a supporting plate preparing step of preparing a supporting plate having, on a top surface side of the supporting plate, a recessed portion configured to house a projecting portion provided in a device region of the workpiece; a positioning step of mounting the workpiece on the supporting plate such that the recessed portion of the supporting plate and the device region of the workpiece correspond to each other; a bonding step of forming a welded region in which the workpiece is welded to the supporting plate by irradiating a peripheral surplus region of the workpiece mounted on the supporting plate with a laser beam, whereby the workpiece is fixed on the supporting plate; and a processing step of processing the workpiece after performing the bonding step.

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Tokyo, Japan

Nao Hattori