Unisantis Electronics Singapore Pte. Ltd.

Agency for Science, Technology and Research

Nansheng Shen

Navab Singh

Fujio Masuoka

Hiroki Nakamura

Shintaro Arai

Tomohiko Kudo

Kavitha Devi Buddharaju

Yisuo Li

Xiang Li

Zhixian Chen

Vladimir Bliznetsov

King-Jien Chui

Yu Jiang

R Ramana Murthy

Ming Lin Julius Tsai

Jiaqiang Eldwin Ng

The semiconductor device according to the present invention is an nMOS SGT and is composed of a first n+ type silicon layer, a first gate electrode containing metal and a second n+ type silicon layer arranged on the surface of a first columnar silicon layer positioned vertically on a first planar silicon layer. Furthermore, a first insulating film is positioned between the first gate electrode and the first planar silicon layer, and a second insulating film is positioned on the top surface of the first gate electrode. In addition, the first gate electrode containing metal is surrounded by the first n+ type silicon layer, the second n+ type silicon layer, the first insulating film and the second insulating film.

Surrounding gate transistor (SGT) structure

Embodiments provide a switching device. The switching device includes a substrate, which includes a contact region. The switching device further includes a vertical layer arrangement extending from the substrate next to the contact region. The vertical layer arrangement includes a control layer. The switching device further includes a freestanding silicon cantilever extending vertically from the contact region.

Switching device and a method for forming a switching device

The semiconductor device includes: a columnar silicon layer on the planar silicon layer; a first n+ type silicon layer formed in a bottom area of the columnar silicon layer; a second n+ type silicon layer formed in an upper region of the columnar silicon layer; a gate insulating film formed in a perimeter of a channel region between the first and second n+ type silicon layers; a gate electrode formed in a perimeter of the gate insulating film, and having a first metal-silicon compound layer; an insulating film formed between the gate electrode and the planar silicon layer, an insulating film sidewall formed in an upper sidewall of the columnar silicon layer; a second metal-silicon compound layer formed in the planar silicon layer; and an electric contact formed on the second n+ type silicon layer.

Surround gate CMOS semiconductor device

A method for producing a semiconductor device includes preparing a structure having a substrate, a planar semiconductor layer and a columnar semiconductor layer, forming a second drain/source region in the upper part of the columnar semiconductor layer, forming a contact stopper film and a contact interlayer film, and forming a contact layer on the second drain/source region. The step for forming the contact layer includes forming a pattern and etching the contact interlayer film to the contact stopper film using the pattern to form a contact hole for the contact layer and removing the contact stopper film remaining at the bottom of the contact hole by etching. The projection of the bottom surface of the contact hole onto the substrate is within the circumference of the projected profile of the contact stopper film formed on the top and side surface of the columnar semiconductor layer onto the substrate.

Semiconductor device and production method thereof

Growing community of inventors

Singapore, Singapore

Nansheng Shen