Minnesota Mining and Manufacturing Company

Imation Corporation

Nang T Tran

Kenneth R Paulson

Neil W Loeding

John C Dahlquist

William R Qualls

James R Gilbert

Joseph Y Pai

Choon-Woo Kim

David V Nins, Deceased

Michael F Weber

Donald J Sauer

James M DePuydt

Douglas R Plourde

William C Tait

Bruce H Edwards

Robert P Wenz

Frank E Aspen

Arne Bengt Boberg

Michael P Keyes

Frank R Jeffrey

Thomas J Staiger

Brian D Brong

David J Owen

Douglas G Pedrotty

James C Brown, Jr

Bruce A Sventek

Roger J Mandt

David V Nins

Edward L Schneider

Franco A Mori

Luciano W Morrone

Meredith J Williams

A method for producing a magnetic recording medium includes heat-curing a coated substrate to cure a non-magnetic back coat on the substrate and to cure a magnetic front coat on the substrate, and calendering the heat-cured coated substrate to produce the magnetic recording medium. The calendering optionally is off-line calendering during which the substrate passes between opposed, generally non-compliant rolls. Other methods, and magnetic recording media produced by the disclosed methods, also are disclosed.

Heat curing and subsequent calendering to produce magnetic recording media

In one embodiment, the invention is directed toward inline lapping of magnetic tape. The lapping process is performed inline with one or more other magnetic tape manufacturing processes. In this manner, the number of times the magnetic tape is un-spooled and then re-spooled can be reduced. Consequently, the amount of handling of the individual tape pancakes can also be reduced, thus avoiding damage to the edge of the tape, or other damage associated with tape pancake handling.

Inline lapping of magnetic tape

In one embodiment, the invention is directed to techniques for controlling the abrasivity of magnetic tape without modifying the coating formulas used to create the magnetic tape. For example, the invention may involve controlling or adjusting the abrasivity of magnetic tape using one or more burnishing techniques such as lapping, vaming or scraping. In this manner, the abrasivity of magnetic tape can be controlled or adjusted to ensure that the tape meets the necessary tape specifications without modifying the coating formulas applied during the coating process.

Abrasivity control of magnetic media using burnishing techniques

A solid state radiation detector for medical imaging incorporates an array of transistors and a continuous radiation detecting layer positioned over the transistors and electrically coupled to the transistors. The transistors may reside on a plurality of tiles, with the continuous radiation detecting layer being disposed over the tiles.

Solid state radiation detector for x-ray imaging

Pixel array including a high resolution mode and a low resolution mode and method of reading out the pixel array in a high and low resolution mode. The pixel array includes a first signal line and a second signal line. An array of pixel elements are provided, each pixel element coupled to the first signal line or the second signal line. A switch mechanism is provided for coupling the first signal line to the second signal line. A mechanism is also provided for conveying a charge associated with each pixel element to the first signal line or the second signal line. A mechanism may also be provided for buffering signals between the first signal line, the second signal line, and an output signal line.

Pixel array with high and low resolution mode

A solid state radiation detector provides a plurality of modules disposed adjacent one another in a two-dimensional array. Each of the modules includes an array of thin film transistors. A continuous radiation detecting layer, such as a photoconductor layer, is disposed over the modules. The radiation detecting layer generates electrical charge representative of a pattern of radiation. The thin film transistors are used to sense the electrical charge on a pixel-by-pixel basis to form a representation of an image. A continuous insulating layer can be disposed between the radiation detecting layer and a continuous conducting layer.

Radiation detector and fabrication method

A solid state radiation detector and fabrication method therefor provide a plurality of modules disposed adjacent one another in a two-dimensional array. Each of the modules includes an array of thin film transistors. A continuous radiation detecting layer, such as a photoconductor layer is disposed over the modules. The radiation detecting layer generates electrical charge representative of a pattern of radiation. The thin film transistors are used to sense the electrical charge on a pixel-by-pixel basis to form a representation of an image. A continuous insulating layer can be disposed between the radiation detecting layer and a continuous conducting layer.

Multi-module solid state radiation detector with continuous

A multi-module radiation detecting device, a radiation detecting module for incorporation in a multi-module radiation detecting device, and a method for assembling a multi-module radiation detecting device are provided. The radiation detecting module includes a carrier substrate and a radiation detecting tile mounted over the carrier substrate. The module includes interconnection structure for connecting radiation detecting elements in the radiation detecting tile to conductive contacts on a base substrate. The module facilitates attachment and detachment of the module relative to the base substrate and relative to a test fixture used in test and burn-in operations. The module is constructed to isolate the radiation detecting tile from thermal and/or mechanical stresses produced at the interconnection interface during attachment and detachment for test and burn-in, assembly, and rework operations. As a result, the module can be used to produce a multi-module radiation detecting device having enhanced reliability. The module can help maintain device reliability despite rework operations, and can thereby reduce rework costs.

Multi-module radiation detecting device and fabrication method

A solid state radiation detection panel adapted to receive radiation, having a plurality of modules positioned immediately adjacent each other, with each of the plurality of modules having an array of photosensitive detectors arranged in a plurality of rows and columns, each of the photosensitive detectors having a radiation sensitive area; and circuit means for selectively addressing one of the photosensitive detectors by addressing one of the plurality of rows and one of the plurality of columns and reading the output of the one of the array of photosensitive detectors where each of the plurality of modules being arranged in a three dimensional structure in which the array of photosensitive detectors is arranged on a planar first surface of the module covering substantially the entire area of the planar first surface. The circuit means is located within the module in an area away from the planar first surface opposite from the received radiation. Photosensitive detectors located along an edge of the module having non-radiation sensitive circuitry located opposite the edge from the radiation sensitive area. The radiation sensitive area of the edge photosensitive detectors are smaller than the radiation sensitive area of the inside photosensitive detectors and the center to center distance of the radiation sensitive area of adjacent photosensitive detectors is maintained substantially constant between adjacent edge photosensitive detectors as adjacent inside photosensitive detectors. The module further has a pin diode along the edge of the module.

Solid state radiation detection panel having tiled photosensitive

A process for producing a polysilicon thin film transistor includes hydrogenating the thin film transistor and depositing an atomic hydrogen-containing layer on the thin film transistor. The thin film transistor is characterized by leakage current rates as low as 10.sup.-13 A.

Method of fabricating a polysilicon thin film transistor

A process for producing an array of solid state radiation detectors includes depositing on a substrate one or more layers of silicon-based materials and then depositing a metal layer overlying silicon-based substance. The metal layer is formed into an array of metal layer regions, and then the metal layer is used as a mask to remove exposed adjacent silicon-based substance layers thereby forming an array of silicon-based substance layers that are aligned with the array of metal layers for forming an array of photosensitive sensing devices. The process of the present invention reduces the number of microlithography steps that are used in forming an array of layered amorphous silicon photosensitive devices.

Process for producing a solid state radiation detector

The growth of a phosphor layer deposited on a patterned substrate containing a multiplicity of recessed ridges of triangular cross section can be controlled by tailoring the geometry of the recessed ridge structures. During the deposition process, little or no phosphor deposition occurs on the recessed ridge structures, and cracks are formed which separate the otherwise uniformly growing phosphor which is present in other regions of the patterned substrate where more substantial phosphor deposition occurs.

Process for forming a phosphor

A solid state radiation detection panel to receive radiation, having a plurality of modules positioned immediately adjacent each other, with each of the plurality of modules having an array of photosensitive detectors arranged in a plurality of rows and columns, each of the photosensitive detectors having a radiation sensitive area; and circuit for selectively addressing one of the photosensitive detectors by addressing one of the plurality of rows and one of the plurality of columns and reading the output of the one of the array of photosensitive detectors where each of the plurality of modules being arranged in a three dimensional structure in which the array of photosensitive detectors is arranged on a planar first surface of the module covering substantially the entire area of the planar first surface. The circuit is located within the module in an area away from the planar first surface opposite from the received radiation. Photosensitive detectors located along an edge of the module having non-radiation sensitive circuitry located opposite the edge from the radiation sensitive area. The radiation sensitive area of the edge photosensitive detectors are smaller than the radiation sensitive area of the inside photosensitive detectors and the center to center distance of the radiation sensitive area of adjacent photosensitive detectors is maintained substantially constant between adjacent edge photosensitive detectors as adjacent inside photosensitive detectors. The module further has a p/n diode along the edge of the module.

A radiation detection device includes a plurality of pixels, each pixel includes a thin film transistor and a photodiode conductively connected to a gate of the thin film transistor with the photodiode generating a current when the pixel is exposed to x-rays.

Solid state radiation detector

A pixelized phosphor screen having an array of pixelized phosphors on a support which are separated a width of from greater than 0.0 to 5.0 microns. In order to produce the phosphor screen, phosphor is deposited on a support and then exposed to radiation to create an array of pixelized phosphors separated by slots. The resulting slots between the pixelized phosphors are then filled in with additional phosphor material such that the width between the pixelized phosphors is from greater than 0.0 to 5.0 microns.

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Lake Elmo, MN, United States of America

Nang T Tran