Honeywell International Inc.

Johnson Matthey Inc.

Johnson Matthey Electronics, Inc.

Uop Lcc

Nancy E Iwamoto

Bo Li

Roger Leung

Ananth Naman

Alan Grieve

Jesse L Pedigo

Paul G Apen

William B Bedwell

Xiao-Qi Zhou

Shao Wei Li

Kreisler S Lau

Boris Korolev

Henry Wevick

Teresa A Ramos

Joseph T Kennedy

Stephen Frederic Yates

Michael D Goodner

Victor Y Lu

Nigel P Hacker

Makarem A Hussein

Lorenza Moro

Steven J Sanders

Songyuan Xie

Ruslan Zherebin

Shyama P Mukherjee

Anil Shriram Bhanap

Robert Richard Roth

Austin Taranta

Nassrin Sleiman

Jan Nedbal

John G Sikonia

Mark A Fradkin

Amauel Gebrebrhan

Ulrich Bonne

Timothy A Brandvold

Hayim Abrevaya

Denis H Endisch

Paul S Fechner

Avram Michael Buchbinder

Timothy J Callaghan

James A Kweeder

Tadashi Nakano

Teresa Baldwin

Eric J Rainal

George J Samuels

Gregory J Shafer

Phuong T M Do

Kara L Warrensford

Jason T Stuck

Brian J Daniels

Jason C Grooms

Stephen Tisdale

Tao Li

Clinton A Threlfall

Arlene Suedemeyer

Mello Hebert

A system is provided, the system including at least one integrated optical circuit (IOC) formed from at least one material, and a support-structure configured to support the at least one IOC to couple light between other components. A performance of the at least one IOC is improved by treatment with at least one selected gas.

Treatment and/or stabilizing gases in an optical gyro based on an inorganic waveguide

A stabilized integrated optical circuit is presented. The stabilized integrated optical circuit includes at least one integrated optical chip formed from at least one inorganic material, a stabilizing-polarizable-fill gas, and an enclosure enclosing the at least one integrated optical chip and the stabilizing-polarizable-fill gas. At least one surface of the at least one integrated optical chip is modified by a treatment with at least one treatment gas selected to stabilize defects on the at least one surface. The stabilizing-polarizable-fill gas includes NO and at least one polarizable material.

Stabilization gas environments in a proton-exchanged lithium niobate optical chip

A process of making terephthalic acid or a derivative of terephthalic acid is described. The process includes reacting a derivative of 2,5-dimethylfuran, with a dienophile containing an unsaturated 2-carbon unit, in the presence of a catalyst having Br&#xf6;nsted acidity to form a para-xylene derivative; and optionally reacting the para-xylene derivative to terephthalic acid.

Processes and catalysts for conversion of 2,5-dimethylfuran derivatives to terephthalate

Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

Anti-reflective coating for photolithography and methods of preparation thereof

An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

Antireflective coatings for via fill and photolithography applications and methods of preparation thereof

Preferred aspects of the present invention provide ammonium nitrate compositions comprising ammonium nitrate and at least a second compound, said second compound being present under conditions and in amounts effective to substantially reduce the detonation sensitivity of the composition and/or to otherwise improve a desired property of the composition. In certain embodiments, the second compound is selected from the group consisting of ammonium sulfate, ammonium phosphate, calcium nitrate, potassium nitrate, magnesium nitrate, ammonium molybdenate, ammonium hexaflouralsilicate, neodymium hydroxynitrate, and combinations of two or more of these. In preferred embodiments, at least a substantial portion of the ammonium nitrate in the composition is in the form of a double salt with one or more of said second compounds. In highly preferred embodiments, the present compositions consist essentially of one or more double salts of ammonium nitrate and a second compound as described herein.

Compositions comprising ammonium nitrate double salts

A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.

Method for making toughening agent materials

A polyvinylidene difluoride copolymer with a fluoroolefin selected from 2,3,3,3-tetrafluoropropene, 1,1,3,3,3-pentafluoropropene, 2-chloro-pentafluoropropene, hexafluoropropylene, trifluoroethylene, chlorotrifluoroethylene, 3,3,3-trifluoro-2-trifluoromethylpropene and a mixture thereof, wherein the stoichiometry of the co-monomers defines the barrier properties of the copolymer. Such polymers include moisture barrier copolymers and oxygen barrier copolymer. Processes for preparing such moisture barrier copolymers and oxygen barrier copolymers are also provided.

Copolymers for barriers

An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film.

Selecting a stationary phase for a fluid analyzer using certain criteria to determine an appropriate material for use in, for instance, a micro fluid analyzer. High absorption of an analyte or sample, low water sorbency and high porosity or permeability of the material may be sought. A selected material may incorporate a toughening agent using a neutral leaving group. A selected material may have a capping agent to promote hydrophobicity. A selected material may be a hydrophobic polymer. The selection of a stationary phase may involve molecular modeling.

Stationary phase materials for micro gas analyzer

A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobicity of the organosilicate glass dielectric film.

Repairing damage to low-k dielectric materials using silylating agents

The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen. Preferably, the porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymer, functionalized polyacenaphthylene homopolymer, polyacenaphthylene copolymer, polynorbornene, polycaprolactone, poly(2-vinylnaphthalene), vinyl anthracene, polystyrene, polystyrene derivatives, polysiloxane, polyester, polyether, polyacrylate, aliphatic polycarbonate, polysulfone, polylactide, and blends thereof. The present compositions are particularly useful as dielectric substrate material in microchips, multichip modules, laminated circuit boards, and printed wiring boards.

Organic compositions

The present invention provides a composition comprising: The present compositions may be used as a dielectric substrate material, etch stop, hardmask, or air bridge in microchips, multichip modules, laminated circuit boards, or printed wiring boards. The present composition may also be used as a passive coating for enveloping a completed wafer.

The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [YSiO][ZSiO][HSiO]where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.

Organosiloxanes

Growing community of inventors

Ramona, CA, United States of America

Nancy E Iwamoto