Adeka Corporation

Nana Okada

Tomoharu Yoshino

Atsushi Yamashita

Akihiro Nishida

Masako Hatase

Atsushi Sakurai

Masaki Enzu

Ryota Fukushima

Yoshiki Ooe

A method for producing a thin-film containing a metal atom or a semimetal atom on the surface of a substrate, comprising the steps of vaporizing a thin-film forming raw material comprising an alkoxide compound represented by the following general formula (1), introducing the vaporized compound into a treatment atmosphere, and subjecting the vaporized compound to decomposition and/or a chemical reaction, to thereby form the thin-film containing a metal atom or a semimetal atom on the surface of the substrate: where Rto R, M and n are defined herein.

Alkoxide compound, thin-film forming raw material, and method of producing thin-film

A ruthenium compound represented by a general formula described in the specification, a raw material which is for forming a thin film and which contains the ruthenium compound, and a method of producing a thin film using the raw material for forming a thin film are provided.

Ruthenium compound, raw material for forming thin film, and method for producing thin film

A raw material for forming a thin film, comprising a compound represented by General Formula (1) below.  wherein Rrepresents an isopropyl group, Rrepresents a methyl group, Rand Reach independently represent a linear or branched alkyl group havingtocarbon atoms, A represents a propane--diyl group and M represents copper, nickel, cobalt or manganese.

Compound, raw material for forming thin film, method for manufacturing thin film, and amidine compound

The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): where Rto Reach independently represent an alkyl group having 1 to 5 carbon atoms, and Arepresents an alkanediyl group having 1 to 5 carbon atoms.

Thin-film forming raw material for use in atomic layer deposition method, thin-film forming raw material, method for producing thin-film, and compound

A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, Rrepresents a linear or branched alkyl group having 1 to 5 carbon atoms, Rrepresents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, Rand Reach independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.).

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Tokyo, Japan

Nana Okada