Kabushiki Kaisha Toshiba

Nana Hatano

Wataru Saito

Syotaro Ono

Miho Watanabe

Hiroshi Ohta

Munehisa Yabuzaki

Yasuto Sumi

Wataru Sekine

Masaru Izumisawa

Kiyoshi Kimura

According to one embodiment, a power semiconductor device includes a second semiconductor layer of a first conductivity type and a third semiconductor layer of a second conductivity type periodically disposed repeatedly along a surface of the first semiconductor layer on a first semiconductor layer of the first conductivity type. A first main electrode is provided to electrically connect to the first semiconductor layer. A fourth semiconductor layer of the second conductivity type is provided to connect to the third semiconductor layer. Fifth semiconductor layers of the first conductivity type are selectively provided in the fourth semiconductor layer surface. A second main electrode is provided on a surface of the fourth and fifth semiconductor layers. A control electrode is provided on a surface of the fourth, fifth, and second semiconductor layers via a gate insulating film. First insulating films are provided by filling a trench made in the second semiconductor layer.

Power semiconductor device with a low on resistence

According to one embodiment, a power semiconductor device includes a first semiconductor layer, and first, second and third semiconductor regions. The first semiconductor layer has a first conductivity type. The first semiconductor regions have a second conductivity type, and are formed with periodicity in a lateral direction in a second semiconductor layer of the first conductivity type. The second semiconductor layer is provided on a major surface of the first semiconductor layer in a device portion with a main current path formed in a vertical direction generally perpendicular to the major surface and in a terminal portion provided around the device portion. The second semiconductor region has the first conductivity type and is a portion of the second semiconductor layer sandwiched between adjacent ones of the first semiconductor regions. The third semiconductor regions have the second conductivity type and are provided below the first semiconductor regions in the terminal portion.

Power semiconductor device and method for manufacturing same

A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first or second conductivity type, a second semiconductor layer of the first conductivity type formed on the first semiconductor layer, a third semiconductor layer of the second conductivity type selectively formed on a surface of the second semiconductor layer, at least one trench formed in a periphery of the third semiconductor layer on the surface of the second semiconductor layer, a depth of a bottom surface of the at least one trench being deeper than a bottom surface of the third semiconductor layer, and shallower than a top surface of the first semiconductor layer, and some or all of the at least one trench being in contact with a side surface of the third semiconductor layer, at least one insulator buried in the at least one trench, a first main electrode electrically connected to the first semiconductor layer, and a second main electrode electrically connected to the third semiconductor layer.

Power semiconductor device

A power semiconductor device has semiconductor layers, including: first layer of first type; second and third layers respectively of first and second types alternately on the first layer; fourth layers of second type on the third layers; fifth layers of first type on the fourth layer; sixth and seventh layers respectively of second and first types alternately on the second and third layers; a first electrode connected to the first layer; an insulation film on fourth, sixth, and seventh layers; a second electrode on fourth, sixth, and seventh layers via the insulation film; and a third electrode joined to fourth and fifth layers, wherein the sixth layers are connected to the fourth layers and one of the third layers between two fourth layers, and an impurity concentration of the third layers below the sixth layers is higher than that of the third layers under the fourth layers.

A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed separately in the first semiconductor region. A difference between a charge quantity expressed by an integral value of a net activated doping concentration in the second semiconductor regions in the surface direction of the semiconductor substrate and a charge quantity expressed by an integral value of a net activated doping concentration in the first semiconductor region in the surface direction of the semiconductor substrate is always a positive quantity and becomes larger from the depth of the first junction plane to a depth of a second junction plane on an opposite side from the first junction plane.

Semiconductor device

In a vertical power semiconductor device having the super junction structure both in a device section and a terminal section, an n-type impurity layer is formed on the outer peripheral surface in the super junction structure. This allows an electric field on the outer peripheral surface of the super junction structure region to be reduced. Accordingly, a reliable vertical power semiconductor device of a high withstand voltage can be provided.

Vertical type power semiconductor device having a super junction structure

A semiconductor device according to an embodiment of the present invention includes a device part and a terminal part. The device includes a first semiconductor layer, and second and third semiconductor layers formed on the first semiconductor layer, and alternately arranged along a direction parallel to a surface of the first semiconductor layer, wherein the device part is provided with a first region and a second region, each of which includes at least one of the second semiconductor layers and at least one of the third semiconductor layers, and with regard to a difference value &#x394;N (=N&#x2212;N) obtained by subtracting an impurity amount Nper unit length of each of the third semiconductor layers from an impurity amount Nper unit length of each of the second semiconductor layers, a difference value &#x394;Nwhich is the difference value &#x394;N in the first region of the device part, a difference value &#x394;Nwhich is the difference value &#x394;N in the second region of the device part, and a difference value &#x394;Nwhich is the difference value &#x394;N in the terminal part satisfy a relationship of &#x394;N&#x3e;&#x394;N&#x3e;&#x394;N.

A semiconductor device includes an n+ type semiconductor substrateand a super junction region that has, on the top of the substrate, an n and p type pillar regionsandprovided alternately. The device also includes, in the top surface of the super junction region, a p type base regionand an n type source layer. The device also includes a gate electrodeon the regionand layervia a gate-insulating film, a drain electrodeon the bottom of the substrate, and a source electrodeon the top of the substrate. In the top surface of the super junction region in the terminal region, a RESURF regionis formed. The RESURF region has a comb-like planar shape with repeatedly-formed teeth having tips facing the end portion of the terminal region.

Semiconductor device including a resurf region with forward tapered teeth

A semiconductor device includes a super junction region that has a first-conductivity-type first semiconductor pillar region and a second-conductivity-type second semiconductor pillar region alternately provided on the semiconductor substrate. The first semiconductor pillar region and the second semiconductor pillar region in a termination region have a lamination form resulting from alternate lamination of the first semiconductor pillar region and the second semiconductor pillar region on the top surface of the semiconductor substrate. The first semiconductor pillar region and/or the second semiconductor pillar region at a corner part of the termination region exhibit an impurity concentration distribution such that a plurality of impurity concentration peaks appear periodically. The first semiconductor pillar region and/or the second semiconductor pillar region at a corner part of the termination region have an impurity amount such that it becomes smaller as being closer to the circumference of the corner part.

Semiconductor device and method of manufacturing the same

A semiconductor device of the invention includes: a super junction structure of an n-type pillar layer and a p-type pillar layer; a base layer provided on the p-type pillar layer; a source layer selectively provided on a surface of the base layer; a gate insulating film provided on a portion being in contact with the base layer, a portion being in contact with the source layer and a portion being in contact with the n-type pillar layer on a portion of a junction between the n-type pillar layer and the p-type pillar layer; a control electrode provided opposed to the base layer, the source layer and the n-type pillar layer through the gate insulating film; and a source electrode electrically connected to the base layer, the source layer and the n-type layer. The source electrode is contact with the surface of the n-type pillar layer located between the control electrodes to form a Schottky junction.

Growing community of inventors

Kanagawa-ken, Japan

Nana Hatano