Globalwafers Co., Ltd.

Nan Zhang

Soubir Basak

Parthiv Daggolu

Sumeet S Bhagavat

Gaurab Samanta

Richard Joseph Phillips

William L Luter

Hariprasad Sreedharamurthy

Stephan Haringer

Robert Wendell Standley

HyungMin Lee

Jae-Woo Ryu

Yu-Chiao Wu

Eric Michael Gitlin

Benjamin Michael Meyer

Yu-Chaio Wu

Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.

Methods for producing a single crystal silicon ingot using boric acid as a dopant

A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

Systems for production of low oxygen content silicon

Ingot puller apparatus that use a solid-phase dopant

Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.

Methods for forming single crystal silicon ingots with improved resistivity control

Systems and methods for production of low oxygen content silicon

Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant

Crystal pulling systems for growing monocrystalline ingots from a melt of semiconductor or solar-grade material are described. The crystal pulling systems include seed chuck assemblies designed to reduce formation of deposits on components of the crystal pulling systems by reducing and inhibiting the formation of gas flow recirculation cells within the crystal pulling systems.

Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process

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O'Fallon, MO, United States of America

Nan Zhang