Taiwan Semiconductor Manufacturing Comp. Ltd.

Nan-Ying Yang

Ruey-Hsin Liu

Ming-Ta Lei

Yu-Chang Jong

Liang-Yu Su

Hung-Chih Tsai

Te-Yin Hsia

Chang-Tai Yang

An avalanche-protected field effect transistor includes, within a semiconductor substrate, a body semiconductor layer and a doped body contact region having a doping of a first conductivity type, and a source region a drain region having a doping of a second conductivity type. A buried first-conductivity-type well may be located within the semiconductor substrate. The buried first-conductivity-type well underlies, and has an areal overlap in a plan view with, the drain region, and is vertically spaced apart from the drain region, and has a higher atomic concentration of dopants of the first conductivity type than the body semiconductor layer. The configuration of the field effect transistor induces more than 90% of impact ionization electrical charges during avalanche breakdown to flow from the source region, to pass through the buried first-conductivity-type well, and to impinge on a bottom surface of the drain region.

Avalanche-protected transistors using a bottom breakdown current path and methods of forming the same

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Hsinchu, Taiwan

Nan-Ying Yang