Hyundai Electronics Industries Co. Ltd.

Hynix Semiconductor Inc.

Nan Yi Lee

Ju Il Lee

Woodward Yang

Myung Hwan Cha

The present invention relates to a pinned photodiode for an image sensor and a method for manufacturing the same; and, more particularly, to a pinned photodiode of an image sensor fabricated by CMOS processes and a manufacturing method thereof The pinned photodiode, according to an embodiment of the present invention, includes a semiconductor layer of a first conductivity type; and at least two first doping regions of a second conductivity type alternately formed in the semiconductor layer and connected to each other at edges thereof so that the first doping regions have the same potential, wherein a plurality of PN junctions is formed in the semiconductor layer and the PN junctions improves a capturing capacity of photoelectric charges generated in the photodiode.

Photodiode having a plurality of PN injections and image sensor having the same

The present invention relates to a pinned photodiode for an image sensor and a method for manufacturing the same; and, more particularly, to a pinned photodiode of an image sensor fabricated by CMOS processes and a manufacturing method thereof. The pinned photodiode, according to an embodiment of the present invention, comprises: a semiconductor layer of a first conductivity type; and at least two first doping regions of a second conductivity type alternately formed in the semiconductor layer and connected to each other at edges thereof so that the first doping regions have the same potential, wherein a plurality of PN junctions is formed in the semiconductor layer and the PN junctions improve a capturing capacity of photoelectric charges generated in the photodiode.

Photodiode having a plurality of PN junctions and image sensor having the same

A CMOS image sensor according to the present invention has a low-voltage photodiode which is fully depleted at a bias of 1.2-4.5V. The photodiode comprises: a P-epi layer; a field oxide layer dividing the P-epi layer into a field region and an active region; a N,region formed within the P-epi layer, wherein the first impurity region is apart from the isolation layer; and a P,region of the conductive type formed beneath a surface of the P-epi layer and on the N,region, wherein a width of the P,region is wider than that of the N,region so that a portion of the P,region is formed on the P-epi layer, whereby the P,region has the same potential as the P-epi layer.

CMOS image sensor with equivalent potential diode and method for fabricating the same

CMOS image sensor with equivalent potential diode

The present invention relates to an image sensor; and, more particularly, to an image sensor having test patterns for measuring characteristics of color filters. In accordance with the present invention, the separate quartz wafer or glass wafer is not required. Therefore, unnecessary cost can be saved and high price of light measuring instrument is not necessary any longer, because it is possible to measure the characteristic of exact color filter on substantial wafer. Moreover, since the measurement of color filter is available on the silicon wafer where substantial image sensor is manufactured, the results of measurement are much more exact and it is possible to promptly apply the results to successive wafer or lot. Thus, it contributes to the improvement of yield of the image sensors.

Growing community of inventors

Ichon-shi, South Korea

Nan Yi Lee