International Business Machines Corporation

University of Texas System

The Texas A&m University System

Nan Jing

Chih-Chao Yang

Baozhen Li

Huimei Zhou

Naftali Eliahu Lustig

Mien-Chie Hung

Atsushi Ogino

Jim Shih-Chun Liang

Jun Kameoka

Chao-Kai Chou

A metal-insulator-metal (MIM) capacitor structure includes a substrate extending along a first direction to define a length, a second direction orthogonal to the first direction to define a width, and a third direction orthogonal to the first and second direction to define a height. The substrate includes a first capacitance region and a second capacitance region. The first capacitance region has a first maximum operating voltage (Vmax) and the second capacitance region has a second Vmax that is greater than the first Vmax.

Metal-insulator-metal capacitor structure supporting different voltage applications

Embodiments of the present invention are directed to methods and resulting structures for integrated circuits having metal-insulator-metal (MIM) capacitors that serve as both decoupling capacitors and crack stops. In a non-limiting embodiment, an interconnect is formed on a first portion of a substrate in an interior region of the integrated circuit. A second portion of the substrate is exposed in an edge region of the integrated circuit. A MIM capacitor is formed over the second portion of the substrate in the edge region. The MIM capacitor includes two or more plates and one or more dielectric layers. Each dielectric layer is positioned between an adjacent pair of the two or more plates and a portion of the two or more plates extends over the interconnect in the interior region. A plate of the two or more plates is electrically coupled to a last metal wiring level of the interconnect.

Three-dimensional metal-insulator-metal capacitor embedded in seal structure

A metal insulator metal capacitor and method for fabricating a metal insulator metal capacitor (MIMcap) are disclosed. A first level metal pattern is embedded in a first dielectric layer over a substrate. The first level metal pattern has a top surface co-planar with a top surface of the first dielectric layer. In a selected etch step, either one of the first metal pattern or the first dielectric is etched to form a stepped top surface. A conformal insulating layer on the stepped top surface. The MIMcap is formed on the conformal insulating layer in a conformal manner.

High performance metal insulator metal capacitor

A single molecule or molecule complex detection method is disclosed in certain aspects, comprising nano- or micro-fluidic channels.

Methods for detecting molecule-molecule interactions with a single detection channel

Growing community of inventors

Fishkill, NY, United States of America

Nan Jing