Taiwan Semiconductor Manufacturing Comp. Ltd.

Nan-Hsin Tseng

Chin-Chou Liu

Wei-Pin Changchien

Ping-Han Tsai

Ji-Jan Chen

Bo-Jr Huang

Po-Yu Chen

Chien-Hui Chen

Yen-Ling Liu

Saurabh Gupta

Wei-Hao Kao

Yi-Lin Chuang

Chin-Her Chien

Chih-Sheng Hou

Ramakrishnan Krishnan

Yun-Han Lee

Samuel C Pan

Chi-Yeh Yu

Chi Wei Hu

Pei-Ying Lin

Kin Lam Tong

Ta-Wen Hung

A device includes a sensor configured to provide a temperature-sensitive voltage and an oscillator. The sensor includes: a first transistor, being a diode-connected transistor; a second transistor coupled between a source of the first transistor and ground, wherein a gate of the second transistor is controllable by an enable signal; and a current source configured to control the first transistor and comprising a third transistor, a drain of which is directly connected to a drain of the first transistor, the third transistor being a diode-connected transistor. The oscillator includes: a digital delay cell; and an adjustment device configured to, based on the temperature-sensitive voltage, adjust a delay of the digital delay cell. The digital delay cell produces, based on the adjusted delay, a signal at an oscillation frequency.

Device and method of operating the same

A device includes a sensor and an oscillator. The sensor provides a temperature-sensitive voltage. The oscillator includes a digital delay cell and an adjustment device. The adjustment device, based on the temperature-sensitive voltage, adjusts a delay of the digital delay cell, wherein the digital delay cell produces, based on the adjusted delay, a signal at an oscillation frequency.

An integrated circuit includes a circuit unit and an oscillating signal-generating assembly. The circuit unit includes a plurality of first cells. The oscillating signal-generating assembly is configured to generate different oscillating signals and includes a ring oscillator, a signal line, and a switching unit. The ring oscillator includes a plurality of second cells, each of which has an output terminal. The second cells are of the same type as the first cells. The signal line is configured to receive the different oscillating signals. The switching unit is coupled between the ring oscillator and the signal line and is configured to selectively couple the output terminals of the second cells to the signal line. A timing characteristic of a cell of the same type as the first cells can be estimated from the different oscillating signals.

Integrated circuit with an oscillating signal-generating assembly

A method for performing contactless signal testing includes receiving, with a testing pad of an integrated circuit, a signal within a beam. The method further includes converting, with a number of diodes connected to a positive voltage supply, an electrical current signal created by the electron beam to a voltage signal, wherein the number of diodes includes a diode stack of multiple diodes. The method further includes extracting, with a digital inverter, a test signal from the voltage signal.

Contactless signal testing

Among other things, an integrated circuit and method for routing electrical pathways of an integrated circuit is provided. The integrated circuit comprises a buffer chain coupling a first cell of the integrated circuit to a second cell of the integrated circuit. An electrical pathway coupling a first inverter of the buffer chain with a second inverter of the buffer chain extends through a first set of metal layers and is routed to form a pulse-like shape having an apex at a top layer of the first set.

Integrated circuit comprising buffer chain

A method for performing contactless signal testing includes receiving, with a testing pad of an integrated circuit, a signal within an electron beam, converting an electrical current created by the e-beam to a voltage with a number of diodes connected to a positive voltage supply, extracting a digital test signal from the voltage signal with a digital inverter, and passing the test signal to digital circuitry within the integrated circuit.

The present disclosure relates to a diagnosis framework to shorten yield learning cycles of technology node manufacturing processes from the high defect density stage to technology maturity. A plurality of defect under test (DUT) structures are designed to capture potential manufacturing issues associated with defect formation. A test structure is formed by arranging the DUT structures within a DUT carrier unit, which has been yield-hardened though heuristic yield analysis such that a defect density of the DUT carrier unit is essentially zero. Possible outcomes of an application of test patterns and various failure scenarios associated with defects formed within the DUT structures within the DUT carrier unit are simulated and stored in a look-up table (LUT). The LUT may then be referenced to determine a location of a defect within the test structure without the need for iterative analysis to correctly select defect candidates for physical failure analysis (PFA).

Diagnosis framework to shorten yield learning cycles of advanced processes

The present disclosure provides one embodiment of a reflective electron-beam (e-beam) lithography system. The reflective e-beam lithography system includes an e-beam source to generate an e-beam; a digital pattern generator (DPG) having a plurality of pixels that are dynamically and individually controllable to reflect the e-beam; a substrate stage designed to secure a substrate and being operable to move the substrate; an e-beam lens module configured to project the e-beam from the DPG to the substrate; and an alignment gate configured between the e-beam source and the DPG, wherein the alignment gate is operable to modulate an intensity of the e-beam.

E-beam lithography with alignment gating

A semiconductor arrangement and methods of forming the same are described. A semiconductor arrangement includes a first tier including a first capacitor, a second tier over the first tier, the second tier including a second capacitor, and a first substrate between the first tier and the second tier. The first capacitor is connected to the second capacitor through the substrate. A plurality of tiers are contemplated, such that a total capacitance of the semiconductor arrangement increases based upon interconnection of metal layers of different tiers. Additionally, the semiconductor arrangement has a greater area efficiency as compared to multiple capacitors in parallel.

Semiconductor arrangement and formation thereof

A circuit for pulse width measurement comprises a charging circuit, a comparator and a determining circuit. The charging circuit is configured to charge a capacitive device in response to a periodic signal. The comparator is configured to compare a voltage across the capacitor with a reference voltage level. The determining circuit is configured to determine the number of pulses of the periodic signal in response to a signal from the comparator indicating that the voltage across the capacitor reaches the reference voltage level.

Circuit and method for pulse width measurement

A voltage-controlled oscillator is disclosed. The voltage-controlled oscillator includes an inverter circuit configured to output an oscillation signal. The first inverter circuit includes a complementary transistor pair and a transistor string. The complementary transistor pair includes a first switch transistor and a second switch transistor. The second switch transistor is connected to the first switch transistor, in which a first terminal of the second switch transistor is connected to a second terminal of the first switch transistor. The first delaying unit includes at least one delaying transistor. A first terminal of the at least one delaying transistor is connected to a control terminal of the second switch transistor. A second terminal of the at least one delaying transistor is connected to a control terminal of the first switch transistor. A control terminal of the at least one delaying transistor is configured to receive a voltage control signal.

Voltage-controlled oscillator

A device includes a first die coupled to an interconnect structure of an interposer. The first die includes a first BIST circuit configured to generate and output test signals to the interconnection structure of the interposer. A second die is coupled to the interconnect structure of the interposer and includes a second BIST circuit configured to receive signals from the interconnection structure of the interposer in response to the first BIST circuit transmitting the test signals. The second BIST circuit is configured to compare the signals received from the interconnection structure of the interposer to reference signals generated by the second BIST circuit.

Built-in self-test for interposer

An interposer for a 3D-IC is provided with a plurality of functional metal wiring segments where the plurality of functional metal wiring segments are connected in series by a plurality of dummy metal wiring segments thus allowing the plurality of functional metal wiring segments to be electrically tested for continuity Each of the plurality of dummy metal wiring segments is provided with a laser fuse portion for disconnecting the dummy metal wiring segments upon completion of the electrical test.

3D-IC interposer testing structure and method of testing the structure

Test points on an integrated circuit chip, especially points subject to IR voltage drop along power supply rails, are coupled to comparators controlled by an automatic test controller, all included on the chip. Each test point can have one or more comparators and one or more reference voltages over a testing range. A change of state at a comparator sets a latch that is read and reset by the on-chip automatic test controller during test intervals. The automatic test controller can coordinate with external automatic test equipment that applies stimulus signals to the chip during testing. The greatest voltage drop during a test interval is determined from the latched output of the switched comparator coupled to the lowest reference voltage. The setting and resetting of the latch can be gated through a selectable delay so as to discriminate for excursions that persist for a longer or shorter time.

Growing community of inventors

Tainan, Taiwan

Nan-Hsin Tseng