Samsung Electronics Co., Ltd.

Namseog Kim

Donghyeon Jang

Chajea Jo

In Young Lee

Pyoungwan Kim

Minseung Yoon

Keumhee Ma

A semiconductor device and a method for fabricating the same, wherein a portion of a substrate comprising a pad is removed to form a via hole. An insulating layer is formed on the substrate. A portion of the insulating layer is removed to form a plurality of openings exposing portions of the pad. A through electrode is formed to fill the via hole and to be electrically connected to the pad through one of the plurality of openings. A portion of the pad is exposed by another opening among the plurality of openings.

Semiconductor device comprising a through electrode and a pad connected to the through electrode and having an exposed portion and method for fabricating the same

Through-Silicon-Via (TSV) structures can include a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, a conductive protective layer including Ni and/or Co can be at a bottom of the conductive via, and a separate polymer insulating layer can be on the backside surface of the substrate in contact with the conductive protective layer.

Through-silicon via structures including conductive protective layers

Growing community of inventors

Yongin-si, South Korea

Namseog Kim