Samsung Electronics Co., Ltd.

Namkyu Cho

Sanggil Lee

Seung Hun Lee

Seokhoon Kim

Jeong Yun Lee

Pankwi Park

Sihyung Lee

Junghoon Park

Yang Xu

Geum Jung Seong

Seung Soo Hong

Sunghea Cho

Jongcheun Seo

Dongsuk Shin

Seok Hoon Kim

Hyun-Kwan Yu

Dohyun Kim

Kang Hun Moon

Dongmyoung Kim

Kanghun Moon

Hyunkwan Yu

Geo Myung Shin

Junguk Jun

Jeong Min Choi

Min Hee Choi

Sangmin Lee

Choeun Lee

Jungtaek Kim

Ryong Ha

Myung Il Kang

Bumun Jung

Myung Ii Kang

Taeho Yoon

Dohyun Go

Heunggyun Roh

Namhyoung Kim

Eunsuk Kim

A semiconductor device includes a substrate including a first active pattern, a first channel pattern on the first active pattern, the first channel pattern including first, second, and third semiconductor patterns spaced apart from one another and vertically stacked, a first source/drain pattern connected to the first to third semiconductor patterns, and a gate electrode on the first to third semiconductor patterns. The first source/drain pattern includes a first protrusion protruding toward the first semiconductor pattern, a second protrusion protruding toward the second semiconductor pattern, and a third protrusion protruding toward the third semiconductor pattern. A width of the second protrusion is greater than a width of the first protrusion. A width of the third protrusion is greater than the width of the second protrusion.

Semiconductor device including a vertically stacked channel pattern and method for manufacturing the same

A semiconductor device includes a substrate including a first region, a second region, and active regions extending in a first direction in the first region and in the second region; gate electrodes on the first region and the second region, the gate electrodes intersecting the active regions and extending in a second direction; a plurality of channel layers spaced apart from each other in a third direction on active regions of the active regions and encompassed by the gate electrodes, the third direction being perpendicular to an upper surface of the substrate; and first source/drain regions and second source/drain regions in portions of the active regions that are recessed on both sides of the gate electrodes, the first source/drain regions and the second source/drain regions being connected to the plurality of channel layers, wherein the first source/drain regions are in the first region, and the second source/drain regions are in the second region, wherein an end portion of each of the first source/drain regions in the second direction in a plan view includes a tip region protruding in the second direction, and wherein an end portion of each of the second source/drain regions in the second direction in the plan view extends flatly in the first direction.

Semiconductor device including source/drain regions having triangular tip regions

A control method for a home appliance including a motor that is driven by a driving current. The control method includes (a) receiving a stop signal to stop the motor, (b) based on receiving the stop signal, performing open brake control that stops supply of the driving current to the motor, (c) based on a motor phase current of the motor at a start of the open brake control, estimating an initial motor speed of the motor at the start of the open brake control, (d) based on the estimated initial motor speed, determining a start time point of short brake control that applies a torque in a reverse direction to a rotation direction of the motor, and (e) performing the short brake control at the determined start time point of the short brake control.

Home appliance including motor and control method for home appliance

A semiconductor device may include a substrate including center and edge regions, active patterns on the substrate, channel patterns on the active patterns, source/drain patterns connected to the channel patterns, and gate electrodes on the channel patterns. Each of the source/drain patterns may include a buffer layer in contact with a corresponding one of the channel patterns and a main layer on the buffer layer. The main layer of each of the source/drain patterns may include first and second semiconductor layers, which may be sequentially stacked and contain germanium. A concentration of the germanium in the first semiconductor layer may be higher on the center region than on the edge region, and a concentration of the germanium in the second semiconductor layer may be lower on the center region than on the edge region.

Semiconductor device and method of fabricating the same

A semiconductor device includes a semiconductor active region having a vertical stack of multiple spaced-apart semiconductor channel regions thereon. A gate electrode extends on the active region and between the spaced-apart channel regions. A source/drain region contacts the spaced-apart channel regions. The source/drain region includes a stack of at least first, second and third epitaxial layers having different electrical characteristics. The first epitaxial layer contacts the active region and each of the spaced-apart channel regions. The second epitaxial layer contacts a first portion of an upper surface of the first epitaxial layer. The third epitaxial layer contacts a second portion of the upper surface of the first epitaxial layer. Each of the first, second and third epitaxial layers includes silicon germanium (SiGe) with unequal levels of germanium (Ge) therein. A level of germanium in the third epitaxial layer exceeds a level of germanium in the second epitaxial layer, which exceeds a level of germanium in the first epitaxial layer.

Multi-channel field effect transistors with enhanced multi-layered source/drain regions

A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.

Semiconductor devices

A semiconductor device includes a plurality of active fins extending in a first direction, and spaced apart from each other in a second direction, the plurality of active fins having upper surfaces of different respective heights, a gate structure extending in the second across the plurality of active fins, a device isolation film on the substrate, a source/drain region on the plurality of active fins, and including an epitaxial layer on the plurality of active fins, an insulating spacer on an upper surface of the device isolation film and having a lateral asymmetry with respect to a center line of the source/drain region in a cross section taken along the second direction, an interlayer insulating region on the device isolation film and on the gate structure and the source/drain region, and a contact structure in the interlayer insulating region and electrically connected to the source/drain region.

Provided is a scroll compressor with enhanced sealing structure of a back pressure chamber. The scroll compressor includes a housing, a fixed scroll fixed to inside of the housing and including a fixed wrap, an orbit scroll including an orbit wrap which forms a compression chamber together with the fixed wrap, a back pressure chamber formed at a frame supporting the orbit scroll, and accommodating refrigerant for pressurizing the orbit scroll to a direction of the fixed scroll, and a sealing ring arranged between the fixed scroll and the orbit scroll to prevent the refrigerant in the back pressure chamber from flowing in or out through a gap between the fixed scroll and the orbit scroll, wherein the sealing ring includes a cut portion cut for the sealing ring to be deformable in a circumferential direction.

Scroll compressor

Disclosed is a semiconductor device including a first active pattern that extends in a first direction on an active region of a substrate, a first source/drain pattern in a recess on an upper portion of the first active pattern, a gate electrode that runs across a first channel pattern on the upper portion of the first active pattern and extends in a second direction intersecting the first direction, and an active contact electrically connected to the first source/drain pattern.

Semiconductor device

A semiconductor device includes an active fin on a substrate, a gate electrode and intersecting the active fin, gate spacer layers on both side walls of the gate electrode, and a source/drain region in a recess region of the active fin at at least one side of the gate electrode. The source/drain region may include a base layer in contact with the active fin, and having an inner end and an outer end opposing each other in the first direction on an inner sidewall of the recess region. The source/drain region may include a first layer on the base layer. The first layer may include germanium (Ge) having a concentration higher than a concentration of germanium (Ge) included in the base layer. The outer end of the base layer may contact the first layer, and may have a shape convex toward outside of the gate electrode on a plane.

A scroll compressor includes a main body, a cover to divide the main body into a low pressure section and a high pressure section, a fixed scroll including a first discharge port, an orbiting scroll to rotate with respect to the fixed scroll and to form a compression chamber together with the fixed scroll, a discharge guide disposed between the fixed scroll and the cover and including a second discharge port connected to the first discharge port, and a back pressure actuator configured to form a back pressure chamber together with the discharge guide and to move in a direction toward the cover with respect to the discharge guide to selectively connect the second discharge port with the high pressure section. The fixed scroll includes a bypass flow path connecting the compression chamber and the second discharge port and a bypass valve to open or close the bypass flow path.

A compressor including a compression unit comprising an inlet for sucking gas and configured to compress the sucked gas; and a casing configured to accommodate the compression unit; and a suction guide comprising a passage for guiding the gas from an outside of the casing to the inlet. The compression unit includes a first surface extending from an edge of the inlet, the suction guide includes a second surface extending from an edge of a vent of the passage, and provided in an internal area of the casing to make the first surface and the second surface face each other, and an external end of the first surface and an internal end of the second surface or an internal end of the first surface and an external end of the second surface do not overlap along a direction of an axis of the compressor.

Compressor having surface of scroll compressor defining boundary of inlet and surface guide defining boundary of vent facing each other and electronic device using the same

Growing community of inventors

Seongnam-si, South Korea

Namkyu Cho