Samsung Electronics Co., Ltd.

Namhyun Lee

Jaehyeoung Ma

Seungmin Song

Junggun You

Taeyong Kwon

Joohee Jung

Sangwoo Pae

Seonhaeng Lee

A semiconductor device includes a first fin pattern protruding from a substrate and extending in a first direction; first and second active layers extending in the first direction on the first fin pattern, the second active layer being at a level higher than a level of the first active layer, the first and second active layers forming a first active layer structure; a first gate intersecting the first and second active layers, surrounding upper and lower surfaces and opposing side surfaces of each of the first and second active layers, and extending in a second direction; and a second gate intersecting the first and second active layers, surrounding upper and lower surfaces and opposing side surfaces of each of the first and second active layers, extending in the second direction, and disposed to be parallel to the first gate. The first active layer includes a first region extending from a first overlapping region of the first active layer overlapping the first gate by a first length in a direction away from the second gate, and the second active layer includes a first region extending from a first overlapping region of the second active layer overlapping the first gate by a second length in a direction away from the second gate, the second length shorter than the first length.

Semiconductor device having different extending active layers

A semiconductor device including a substrate including a division region extending in a first direction, first and second active patterns on the substrate with the division region interposed therebetween, the first and the second active patterns being spaced apart from each other in a second direction perpendicular to the first direction, gate electrodes extending in the first direction and crossing the first and second active patterns, a first channel pattern on the first active pattern, and a second channel pattern on the second active pattern may be provided. The smallest width of the first active pattern may be smaller than the smallest width of the second active pattern, in the first direction. An end portion of the first channel pattern adjacent to the division region may include a protruding portion extending in the first direction, and the protruding portion may have a triangle shape in a plan view.

Semiconductor device

A semiconductor device including a substrate having a central region and a peripheral region; an integrated circuit structure on the central region; and a first structure on the peripheral region and surrounding the central region, wherein a portion of the first structure includes a first fin structure defined by a device isolation region in the substrate; a first dielectric layer covering an upper surface and side surfaces of the first fin structure and an upper surface of the device isolation region; a first gate structure on the first fin structure, the first gate structure including a first gate conductive layer, a first gate dielectric layer covering lower and side surfaces of the first gate conductive layer, and first gate spacer layers on side walls of the first gate conductive layer; and a first insulating structure covering the first dielectric layer and the first gate structure.

Growing community of inventors

Seoul, South Korea

Namhyun Lee