Samsung Electronics Co., Ltd.

Namhoon Kim

Seunghoon Yeon

Hyoeun Kim

Ohguk Kwon

Hyoungmin Kim

Soenghun Kim

Sangkyu Baek

Jaewon Lee

Chajea Jo

Myunghwan Kim

Sungnam Hong

Yonghoe Cho

Hoon Huh

Kyungmin Lee

Dongwoo Lee

Sunkyoung Seo

Jongyoub Ryu

Chiyoun Park

Jaeyoung Roh

Youngho Han

Keunseok Cho

Sungkwon Jo

Jeayoung Kwon

Kyunghun Kim

Injeong Choi

Yoonkyung Song

Yongsung Roh

Kwangyoul Lee

A semiconductor package includes a first semiconductor chip; a lower dam structure disposed on an edge of a top surface of the first semiconductor substrate; a second semiconductor chip, which is mounted on the first semiconductor chip; an upper dam structure disposed on an edge of the bottom surface of the second semiconductor substrate; a chip connecting terminal disposed between the first semiconductor chip and the second semiconductor chip and connecting the first semiconductor chip to the second semiconductor chip; and an adhesive layer disposed between the first semiconductor chip and the second semiconductor chip and surrounding the chip connecting terminal.

Semiconductor package

A semiconductor package comprising a package substrate that has a recessed portion on a top surface thereof, a lower semiconductor chip in the recessed portion of the package substrate, an upper semiconductor chip on the lower semiconductor chip and the package substrate and having a width greater than that of the lower semiconductor chip, a plurality of first bumps directly between the package substrate and the upper semiconductor chip, and a plurality of second bumps directly between the lower semiconductor chip and the upper semiconductor chip. A pitch of the second bumps is less than that of the first bumps.

The present disclosure relates to a communication technique for combining an IoT technology with a 5G communication system for supporting a higher data transmission rate than a 4G system, and a system therefor. The present disclosure can be applied to intelligent services (for example, smart homes, smart buildings, smart cities, smart cars or connected cars, health care, digital education, retail businesses, security and safety-related services, and the like) on the basis of 5G communication technologies and IoT-related technologies. The present invention discloses a method for a base station to transmit interference information in a wireless communication system, the interference information transmission method being characterized by including the steps of: determining whether a frequency resource can be used for resource allocation; generating interference information indicating the interference level of the frequency resource on the basis of the determination; and transmitting the interference information to an adjacent base station, wherein the interference information about the frequency resource has a predetermined value when the frequency resource is not used for resource allocation.

Method and device for transmitting interference information in wireless communication system

A pre-5-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4-Generation (4G) communication system, such as long term evolution (LTE). A user equipment (UE) in a wireless communication system is provided. The UE includes a transceiver, and at least one processor coupled to the transceiver and configured to generate a lone truncated buffer status report (BSR) based on a number of padding bits, and transmit the long truncated BSR informing of data volume for at least one logical channel group among logical channel groups having data for transmission, wherein the data volume for the at least one logical channel group is reported following an order that is determined based on a highest priority logical channel in each of the at least one logical channel group.

Apparatus and method for uplink data report and control channel synchronization in wireless communication system

A semiconductor package includes a first semiconductor chip comprising a semiconductor substrate and a redistribution pattern on a top surface of the semiconductor substrate, the redistribution pattern having a hole exposing an inner sidewall of the redistribution pattern, a second semiconductor chip on a top surface of the first semiconductor chip, and a bump structure disposed between the first semiconductor chip and the second semiconductor chip. The bump structure is disposed in the hole and is in contact with the inner sidewall of the redistribution pattern.

An integrated circuit device includes a semiconductor substrate, first through-silicon-via (TSV) structures penetrating a first region of the semiconductor substrate and spaced apart from each other by a first pitch, a first individual device between the first TSV structures and spaced apart from the first TSV structures by a distance that is greater than a first keep-off distance, and second TSV structures penetrating a second region of the semiconductor substrate and spaced apart from each other by a second pitch that is less than the first pitch. The second region of the semiconductor device does not include an individual device that is homogeneous with the first individual device and between the second TSV structures.

Integrated circuit device and semiconductor package including the same

Disclosed is a semiconductor package comprising a redistribution substrate, a semiconductor chip on the redistribution substrate and including a chip pad electrically connected to the redistribution substrate, and a conductive terminal on the redistribution substrate. The redistribution substrate includes a first dielectric layer, a first redistribution pattern, a second dielectric layer, a second redistribution pattern, and a first insulative pattern. The first redistribution pattern electrically connects the chip pad and the second redistribution pattern. The first insulative pattern has a first surface in contact with the first redistribution pattern and a second surface in contact with the second redistribution pattern. The second surface is opposite to the first surface. A width at the first surface of the first insulative pattern is the same as or greater than a width at the second surface of the first insulative pattern.

A semiconductor package including a substrate; a first semiconductor chip on the substrate; a second semiconductor chip on the first semiconductor chip; and at least one connection terminal between the first semiconductor chip and the second semiconductor chip, wherein the first semiconductor chip includes a first semiconductor chip body; and at least one upper pad on a top surface of the first semiconductor chip body and in contact with the at least one connection terminal, the at least one upper pad includes a recess that is downwardly recessed from a top surface thereof, and a depth of the recess is less than a thickness of the at least one upper pad.

A communication method and a system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. The disclosure discloses a method for a terminal to generate all entry information of multiple power headroom reports (PHRs) as virtual PHs regardless of whether the terminal transmits an uplink to a serving cell in a wireless communication system supporting uplink carrier aggregation.

Growing community of inventors

Suwon-si, South Korea

Namhoon Kim