Samsung Electronics Co., Ltd.

Nambin Kim

Taehun Kim

Sunghoi Hur

Changhee Lee

Kwang Soo Seol

Jaehun Jung

SeungHyun Lim

Dae Sin Kim

Hanvit Yang

Homin Son

Daewoong Kang

Suhwan Lim

Changsub Lee

Samki Kim

Hyeongwon Choi

A semiconductor device includes a lower structure including a semiconductor substrate and circuit devices on the semiconductor substrate; a stack structure including interlayer insulating layers and gate electrodes alternating in a vertical direction; and a channel structure penetrating the stack structure. The channel structure includes a core insulating layer, a channel layer, a gate dielectric layer, and a channel pad. A portion of the channel pad overlaps an uppermost gate electrode among the gate electrodes in a horizontal direction. The channel pad includes a first pad layer and a second pad layer on the first pad layer. The second pad layer includes doped polysilicon that is doped with impurities and having N-type conductivity. The first pad layer includes at least one of an undoped polysilicon region and a doped polysilicon region having N-type conductivity and having an impurity concentration lower than an impurity concentration of the second pad layer.

Semiconductor devices and data storage systems including the same

Provided is a semiconductor device including a substrate, gate electrodes vertically stacked on the substrate, insulating patterns between the gate electrodes, an active pillar provided to penetrate the gate electrodes and the insulating patterns and electrically coupled with the substrate, and a memory pattern provided between the gate electrodes and the active pillar and between the insulating patterns and the active pillar. The gate electrodes include edge portions extending between the memory pattern and the insulating patterns.

Semiconductor device

Growing community of inventors

Seoul, South Korea

Nambin Kim