Samsung Electronics Co., Ltd.

Nam-young Lee

Jae-hoon Lee

Chan-ho Park

Jai-kwang Shin

Hyuk-Soon Choi

Ji-hoon Lee

Hyung-su Jeong

Yong-cheol Choi

Min-kwon Cho

A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

High-electron-mobility transistor

A nitride-based semiconductor device including a substrate; a GaN-containing layer on the substrate; a nitride-containing layer on the GaN layer; a channel blocking layer on the nitride-containing layer, the channel blocking layer including a nitride-based semiconductor; a gate insulation layer on the channel blocking layer; and a gate electrode on the gate insulation layer.

Nitride-based semiconductor device

A transistor includes a device portion and a collector layer. The device portion is in a first side of a semiconductor substrate, and includes a gate and an emitter. The collector layer is on a second side of the semiconductor substrate, which is opposite to the first side. The collector layer is an impurity-doped epitaxial layer and has a doping profile with a non-normal distribution.

Transistors and methods of manufacturing the same

Growing community of inventors

Hwaseong-si, South Korea

Nam-young Lee