Electronics and Telecommunications Research Institute

Hynix Semiconductor Inc.

Cungbuk Nat'l Univ. Industry Academic Cooperation Foundation

Nam Yeal Lee

Dong Ha Jung

Baek Mann Kim

Seung Jin Yeom

Byoung Gon Yu

Sung Min Yoon

Young Sam Park

Joon Seok Oh

Seung Yun Lee

Kyu Jeong Choi

Jeong Tae Kim

Jae Hong Kim

Sangouk Ryu

Sang Ouk Ryu

Chang Soo Park

Kwi Dong Kim

In Kyu You

Seung-Yun Lee

Byoung-Gon Yu

Seong Mok Cho

Byung-Do Yang

Sung-Min Yoon

Woong Chul Shin

Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbSephase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbSein the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.

Phase-change memory device using Sb-Se metal alloy and method of fabricating the same

An electrical conductor having a multilayer diffusion barrier of use in a resultant semiconductor device is presented. The electrical conductor line includes an insulation layer, a diffusion barrier, and a metal line. The insulation layer is formed on a semiconductor substrate and having a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a multi-layered structure made of TaN layer, an MoOlayer and an Mo layer. The metal line is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Electrical conductor line having a multilayer diffusion barrier for use in a semiconductor device and method for forming the same

A metal line having a MoSi/Mo diffusion barrier of a semiconductor device and corresponding methods of fabricating the same are presented. The metal line includes an insulation layer, a diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a stack structure composed of a MoSilayer and a Mo layer. The metal layer is formed on the diffusion barrier which fills in the metal line forming region of the insulation layer.

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A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a multi-layered structure that includes an MoBlayer, an MoBNlayer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Metal line of semiconductor device having a multilayer molybdenum diffusion barrier and method for forming the same

An insulation layer is formed on a semiconductor substrate so as to define a metal line forming region. A diffusion barrier having a multi-layered structure of an MoSilayer, an MoSiNlayer, and an MoNlayer is formed on a surface of the metal line forming region. A metal layer is formed on the diffusion barrier so as to fill the metal line forming region of the insulation layer.

Metal line of semiconductor device having a diffusion barrier and method for forming the same

A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based GeSbTe(0.12&#x2266;x&#x2266;0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.

Phase change memory device and method of fabricating the same

Provided are an apparatus and method for writing data to a phase-change random access memory (PRAM) by using writing power calculation and data inversion functions, and more particularly, an apparatus and method for writing data which can minimize power consumption by calculating the power consumed while input original data or inverted data is written to a PRAM and storing the data consuming less power. A PRAM consumes a significant amount of power in order to store data in a memory cell since a large electric current is required to flow for a long period of time. According to the present invention, since the PRAM consumes different amounts of power when writing data with a value of 0 and data with a value of 1, the power consumed when input original data is stored and the power consumed when the input original data is inverted and stored are compared to each other, the data with a smaller power consumption is stored when the data is written to the PRAM as a word unit, and thus the power consumption of the PRAM can be reduced.

Apparatus and method for writing data to phase-change memory by using power calculation and data inversion

A metal line having a multi-layered diffusion layer in a resultant semiconductor device is presented along with corresponding methods of forming the same. The metal line includes an insulation layer, a multi-layered diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The multi-layered diffusion barrier is formed on a surface of the metal line forming region defined in the insulation layer. The diffusion barrier includes a VBlayer, a CrV layer and a Cr layer. The metal layer is formed on the diffusion barrier which substantially fills in the metal line forming region of the insulation layer to eventually form the metal line.

Metal line having a multi-layered diffusion layer in a semiconductor device and method for forming the same

A method for manufacturing a semiconductor device includes forming an insulation layer having a contact hole on a semiconductor substrate. A metal silicide layer is deposited on a surface of the contact hole and the insulation layer to have a concentration gradient that changes from a silicon-rich composition to a metal-rich composition, with the lower portion of the metal silicide layer having the silicon-rich composition and the upper portion of the metal silicide layer having the metal-rich composition. The metal silicide layer is then annealed so that the compositions of metal and silicon in the metal silicide layer become uniform.

Method for manufacturing semiconductor device preventing loss of junction region

A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate and a metal line forming region is formed in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer, and the diffusion layer has a multi-layered structure of an Ru layer, an RuOlayer, an IrOlayer, and a Ti layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Metal line of semiconductor device and method for forming the same

Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.

Phase change memory device having semiconductor laser unit

A multibit phase change memory device structured such that a plurality of individual phase change memory devices are aligned in a plan area or vertically, and a method of driving the same are provided. The multibit phase change memory device includes a phase change material layer having a plurality of contact portions being in contact with a heating electrode, and having a plurality of active regions, each active region forming a unit phase change memory device. The phase change material layer may be composed of one material layer in which the plurality of active regions are aligned in plural arrays. Alternatively, the phase change material layer may be composed of a plurality of phase change material layers in which one or plural active regions are respectively aligned in one array. The plurality of phase change material layers may be disposed in a same level of a plan area, or the plurality of phase change material layers may be respectively disposed on different plan areas in a same vertical line.

Multibit phase change memory device and method of driving the same

Provided is a phase-change element capable of operating with low power consumption and a method of manufacturing the same. The phase-change element comprises a first electrode used as a heating layer, a second electrode, which is laterally disposed adjacent to the first electrode, and a memory layer made of a phase-change material located between and contacting the side surfaces of the first electrode and the second electrode.

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Daejeon, South Korea

Nam Yeal Lee