Hynix Semiconductor Inc.

Nam Woo So

Cheol Mo Jeong

Jung Geun Kim

Whee Won Cho

Eun Gyeong Jang, Legal Representative

A flash memory device includes an isolation layer formed on an isolation region of a semiconductor substrate, a tunnel insulating layer formed on an active region of the semiconductor substrate, a first conductive layer formed over the tunnel insulating layer, a dielectric layer formed on the first conductive layer and the isolation layer, a first trench penetrating the dielectric layer on the isolation layer to separate parts of the dielectric layer, a second trench formed on the isolation layer and expanded from the first trench, and a second conductive layer formed over the dielectric layer to fill the first and second trenches.

Growing community of inventors

Anyang-si, South Korea

Nam Woo So