Samsung Electronics Co., Ltd.

Other

Nam-seog Kim

Uk-rae Cho

Kwang-Jin Lee

Jung-Woo Park

Uk-Rae Cho

Yong-Jin Yoon

Tae-Hyoung Kim

Seung-Duk Baek

Tae-Gyeong Chung

Seong-Jin Jang

Jin-ho Kim

Sun-Won Kang

Uk-Song Kang

Kang-Wook Lee

Byung-sik Moon

Hoon Bok Lee

Young-hee Song

Se-Young Jeong

Pyoung-Wan Kim

Seok-Ho Kim

Dong-hyeon Jang

Seok-won Lee

Chang-Woo Shin

Sun-young Park

In-young Lee

Woo-Dong Lee

Min-Seung Yoon

Keum-hee Ma

Sang-soo Ko

Byoung-joong Kang

Jin-Hak Choi

Se-young Jeong

Oh-se Yong

Soon-bum Kim

Ju-hyun Lyu

Ho-jin Lee

Ju-Il Choi

Jin-Ho Lee

Hyun-Soo Chung

Jae-won Choi

Cha-Jea Jo

In-Young Lee

Kyu-ha Lee

Eun-Chul Ahn

Sang-wook Park

Ki-Hyuk Kim

Teak-Hoon Lee

Myeong-Soon Park

Chul-Yong Jang

Se-yong Oh

Myung-Kee Chung

Se-Chul Park

Ui-hyoung Lee

Hae-jung Yu

Ju-Ii Choi

An integrated circuit including: an oscillator configured to generate an oscillating voltage with a predetermined oscillation frequency in an oscillation period; a voltage regulator configured to generate an output voltage for driving the oscillator and provide the output voltage to the oscillator; and a current injection circuit configured to provide an oscillation current to the oscillator, in response to an oscillation enable signal in the oscillation period.

Integrated circuit with adaptability to a process-voltage-temperature (PVT) variation

A local oscillator generator (LO generator) may be configured to transmit an LO signal to a mixer. The LO generator may include an input buffer configured to generate a first internal oscillator signal based on the input oscillator signal. The LO generator may include a frequency dividing circuit configured to generate a second internal oscillator signal based on dividing a frequency of the first internal oscillator signal. The LO generator may include an output buffer configured to generate the LO signal based on the second internal oscillator signal. The input buffer and the frequency dividing circuit may each be configured to receive a power voltage independently of the output buffer.

Wide-range local oscillator (LO) generators and apparatuses including the same

A frequency divider may include: a core circuit including a first flip-flop loop and a second flip-flop loop, wherein each of the first flip-flop loop and the second flip-flop loop divides a frequency of a clock signal received via a control terminal of a flip-flop, wherein the core circuit is configured to: output a frequency-divided signal, based on a first signal output by the first flip-flop loop and a second signal output by the second flip-flop loop, the first and second signals having same frequency-division ratios and different phases, and feed back the frequency-divided signal via an input terminal of each of the first and second flip-flop loops; a duty correction circuit that receives the frequency-divided signal and outputs a differential output signal that is generated by correcting a duty ratio of the frequency-divided signal; and an output circuit that outputs a first output signal, which is a signal amplified from the differential output signal, and a second output signal that is a quadrature signal of the first output signal.

Frequency divider and a transceiver including the same

A digital-to-time converter includes: a digital-to-analog converter configured to generate a precharge voltage corresponding to a value of a digital code; a ramp generator configured to precharge a capacitor connected to a first node based on the precharge voltage, and to charge or discharge the capacitor based on a reference current provided from a current source in response to a transition of an input clock signal to generate a ramp voltage in the first node; and a comparator configured to generate an output clock signal based on the ramp voltage, wherein the ramp generator includes: a first switching circuit configured to provide a first current path between a second node connected to the current source and the first node; and a second switching circuit configured to provide a second current path from a power supply voltage source to the second node.

Digital-to-time converter and operating method thereof

A three-dimensional (3D) semiconductor device may include a stack of chips, including a master chip and one or more slave chips. I/O connections of slave chips need not be connected to channels on a motherboard, and only electrode pads of a master chip may be connected to the channels. Only the master chip may provide a load to the channels. A through-substrate via (TSV) boundary may be set on a data input path, a data output path, an address/command path, and/or a clock path of a semiconductor device in which the same type of semiconductor chips are stacked.

3D semiconductor device

A semiconductor module may include a circuit substrate with a first die on the circuit substrate and a second die on the first die. The first die may include at least one first data input/output pad on a first peripheral portion of the first die and at least one first control/address pad on a third peripheral portion, the third peripheral portion being separate from the first peripheral portion of the first die. The second die may include at least one second data input/output pad on a second peripheral portion and at least one second control/address pad on a fourth peripheral portion. The second peripheral portion of the second die is not overlapped with the first peripheral portion of the first die in plan view. The fourth peripheral portion of the second die overlaps at least a portion of the third peripheral portion of the first die.

Semiconductor module

In one embodiment, a wafer level package includes a rerouting pattern formed on a semiconductor substrate and a first encapsulant pattern overlying the rerouting pattern. The first encapsulant pattern has a via hole to expose a portion of the rerouting pattern. The package additionally includes an external connection terminal formed on the exposed portion of the rerouting pattern. An upper section of the sidewall and a sidewall of the external connection terminal may be separated by a gap distance. The gap distance may increase toward an upper surface of the encapsulant pattern.

Wafer level package and methods of fabricating the same

Semiconductor devices and methods of forming the same, including forming a chip pad on a chip substrate, forming a passivation layer on the chip pad and the chip substrate, forming a first insulation layer on the passivation layer, forming a recess and a first opening in the first insulation layer, forming a second opening in the passivation layer to correspond to the first opening, forming a redistribution line in a redistribution line area of the recess, the first opening, and the second opening, forming a second insulation layer on the redistribution line and the first insulation layer, and forming an opening in the second insulation to expose a portion of the redistribution line as a redistribution pad.

Semiconductor devices having redistribution structures and packages, and methods of forming the same

Provided is a chip stack package and a method of manufacturing the same. A chip stack package may include a base chip including a base substrate, a base through via electrode penetrating the base substrate, a base chip pad connected to the base through via electrode, and a base encapsulant. The chip stack package may further include at least one stack chip on a surface of the base substrate. The chip stack package may also include an external connection terminal connected to the base through via electrode and the base chip pad and protruding from the base encapsulant, and an external encapsulant surrounding and protecting outer surfaces of the base chip and the at least one stack chip, wherein the chip through via electrode and the chip pad are connected to the base through via electrode and the base chip pad of the base chip.

Chip stack package and method of fabricating the same

A method of manufacturing semiconductor device includes preparing a substrate having a first surface and a second surface opposite to the first surface. A first insulation layer is formed on the second surface. A sacrificial layer is formed on the first insulation layer. An opening is formed to penetrate through the substrate and extend from the first surface to a portion of the sacrificial layer. A second insulation layer is formed on an inner wall of the opening. A plug is formed to fill the opening. The sacrificial layer is removed to expose a lower portion of the plug through the second surface.

Method of manufacturing the semiconductor device

A chip stack package includes a substrate, a plurality of chips, a plurality of adhesive layers and a plug. The substrate has a wiring pattern and a seed layer formed on the wiring pattern. Each of the chips has an electrode pad and a first through-hole that penetrates the electrode pad. The chips are stacked such that the first through-holes are aligned on the seed layer of the substrate. The adhesive layers are interposed between the substrate and one of the chips, as well as between the chips. Each of the adhesive layers has a second through-hole connected to the first through-hole. The plug fills up the first through-holes and the second through-holes and electrically connects the electrode pads to the wiring pattern of the substrate. A cross-sectional area of the plug in the second through-holes may be larger than that of the plug in the first through-holes.

Method of manufacturing a chip stack package

Growing community of inventors

Seoul, South Korea

Nam-seog Kim