Samsung Sdi Co., Inc.

Intellectual Keystone Technology LLC

Nam-Kyu Song

Min-Seok Oh

Yun-Seok Lee

Dong-Seop Kim

Min Cheol Park

Dong-Uk Choi

Seung-Jae Jung

Byoung-June Kim

Jung-Tae Kim

Czang-Ho Lee

Myung-Hun Shin

Byoung-Kyu Lee

Yuk-Hyun Nam

Joon-Young Seo

Mi-Hwa Lim

Cho-Young Lee

Young-Jin Kim

Young-Su Kim

Min Young Park

Doo-Youl Lee

Young-Sang Park

Chan-Bin Mo

Jun-Ki Hong

Chan-Yoon Jung

Dong-seop Kim

Hoon-Ha Jeon

Yeon-Ik Jang

Dong Choi

A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing a second impurity; and a gap passivation layer located between the first region and the second region on the semiconductor substrate, wherein the first conductive semiconductor layer is also on the gap passivation layer.

Photovoltaic device including gap passivation layer and method of manufacturing the same

A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.

Solar cell

Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Method of manufacturing photoelectric conversion device

Photoelectric conversion device and manufacturing method thereof

Growing community of inventors

Yongin-si, South Korea

Nam-Kyu Song