Samsung Electronics Co., Ltd.

Hyundai Electronics Industries

Nam-Kyu Kim

Byeongchan Lee

Seung-Ho Jang

Chang-Hwan Hwang

Nam-Mi Kim

Bum-Soo Park

Byeong-Chan Lee

Su-Jin Jung

Keum Seok Park

Sungkwan Kang

Woo-bin Song

Sangbom Kang

Bon-Young Koo

Yun-Jin Kim

In-Shik Kim

Seok-Hoon Kim

Hae-Sung Park

Jinbum Kim

Sujin Jung

Choeun Lee

Kwan Heum Lee

Seokhoon Kim

Jae-hyoung Choi

Gyeom Kim

Su-hyun Na

Young-Pil Kim

Dong Chan Suh

Jung-hee Chung

Woo-Sung Lee

Sun-ghil Lee

Sang-Uk Lee

Hae-Kwang Kim

Woo-Jung Moon

Cheol-Soo Park

Sang-Hoon Sull

Heung-Kyu Park

Jong-deuk Kim

Jieon Yoon

Hong-Bum Park

Hyun-Sung Chang

Grip for electronic device case

Case for electronic device

Electronic device

A semiconductor device has a silicide source/drain region is fabricated by growing silicon on an epitaxial region including silicon and either germanium or carbon. In the method, a gate electrode is formed on a semiconductor substrate with a gate insulating layer interposed therebetween. An epitaxial layer is formed in the semiconductor substrate at both sides of the gate electrodes. A silicon layer is formed to cap the epitaxial layer. The silicon layer and a metal material are reacted to form a silicide layer. In a PMOS, the epitaxial layer has a top surface and inclined side surfaces that are exposed above the upper surface of the active region. The silicon layer is grown on the epitaxial layer in such a way as to cap the top and inclined surfaces.

Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the same

A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.

Semiconductor device with adjacent source/drain regions connected by a semiconductor bridge, and method for fabricating the same

Character toy

Semiconductor devices including silicide regions and methods of fabricating the same

Provided are a semiconductor device and a method of fabricating the same. The device may include an active pattern protruding from a substrate, gate structures crossing the active pattern, and a source/drain region provided between adjacent ones of the gate structures. The source/drain region may include a source/drain epitaxial layer in a recessed region, which is formed in the active pattern between the adjacent ones of the gate structures. Further, an impurity diffusion region may be provided in the active pattern to enclose the source/drain epitaxial layer along inner surfaces of the recessed region.

Semiconductor device and method of fabricating the same

Growing community of inventors

Yongin-si, South Korea

Nam-Kyu Kim