Samsung Electronics Co., Ltd.

Humax Networks, Inc.

Korea Electronics Technology Institute

Nam Kyu Cho

Jung-Hoon Park

Jung Hoon Park

Seok Hoon Kim

Hun Joo Lee

Sang Gil Lee

Yang Xu

Dong Suk Shin

Hee Jung Kim

Pan Kwi Park

Yang Sun Kim

Yong Seung Kim

Suk Won Jung

Si Hyung Lee

Jong Eun Lee

A semiconductor device includes a first active pattern having a first lower pattern and a first sheet pattern on the first lower pattern. First gate structures include a first gate electrode. A second active pattern includes a second lower pattern. A second sheet pattern is on the second lower pattern. Second gate structures include a second gate electrode that surrounds the second sheet pattern. A first source/drain recess is between adjacent first gate structures. A second source/drain recess is between adjacent second gate structures. A first source/drain pattern extends along the first source/drain recess. A first silicon germanium filling film is on the first silicon germanium liner. A second source/drain pattern includes a second silicon germanium liner extending along the second source/drain recess. A second silicon germanium filling film is on the second silicon germanium liner.

Multi gate semiconductor device

A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.

Semiconductor device

Wireless communication equipment includes a communication interface, a memory, and a processor electrically connected with the communication interface and the memory. The processor is configured to activate communication of the wireless communication equipment, to scan an external device for a network connection at a periphery of the wireless communication equipment, using the communication interface, to receive information including a mesh ID sent from the external device, using the communication interface, and to configure a mesh network with the external device by using the communication interface, when a designated string stored in the memory is included in the mesh ID.

Wireless communication equipment and method for configuring mesh network thereof

A scroll compressor to prevent reverse flow of refrigerant and reducing flow noise. The scroll compressor efficiently distribute refrigerant suctioned into the scroll compressor to a compression chamber and a drive unit. The scroll compressor includes a main body, a fixed scroll fixedly installed in the main body, an orbiting scroll configured to engage with the fixed scroll and perform a relative orbiting motion, and to form a compression chamber with the fixed scroll, a partition plate disposed above the fixed scroll to separate an inside of the main body into a low-pressure portion and a high-pressure portion, a first check valve installed at a discharge port of the fixed scroll to open and close the discharge port, and a second check valve installed on the partition plate to open and close an opening allowing communication between the low-pressure portion and the high-pressure portion.

Scroll compressor with improved valve installation

Disclosed is a silicon nanowire pressure sensor including a lower substrate with a diaphragm recess in a lower surface thereof, an upper substrate having a first surface attached to an upper surface of the lower substrate, silicon nanowires formed on the first surface of the upper substrate, resistive portions exposed on a second surface of the upper substrate, and a diaphragm region formed by etching a center portion of the second surface of the upper substrate so as to be aligned with the resistive portions, in which the diaphragm recess is larger than the diaphragm region.

Pressure sensor and manufacturing method thereof

A compressor includes a discharge guide provided to communicate a discharge port and a bypass port to a discharge cover so that refrigerant discharged from the discharge port and the bypass port is guided to the discharge cover and a middle-pressure chamber formed by the fixed scroll, the back-pressure cover, and the discharge guide. The compressor according to the embodiments guarantees the space in which the bypass valve can be installed by a discharge guide mounted to a discharge portion of the fixed scroll, and at the same time forms the middle pressure portion, resulting in efficiency improvement of the compressor. The compressor according to the embodiments reduces noise and vibration generated from the discharge portion of the fixed scroll by the discharge guide.

Compressor

Growing community of inventors

Yongin-si, South Korea

Nam Kyu Cho