Samsung Electronics Co., Ltd.

Nam Gyu Cho

Rak Hwan Kim

Won Keun Chung

Do Sun Lee

Hyeok-Jun Son

Jae Wook Ryu

Young Kwan Ko

Dong Wan Koo

Jong Su Lim

Chung Hwan Shin

Kun Hoe Chung

Joon Gon Lee

Sung Hun Kim

Dong Guk Lee

Suk Jin Koo

Ki Hwan Hwang

Man Seok Jeon

Sang Jin Hyun

Yoon Tae Hwang

Jae Chun Woo

Gyu Hwan Yon

Kyu Min Lee

Moon Kyun Song

Soo Jung Choi

Yong Ho Ha

Jae Min Hwang

Sung Wan Pyo

Jun Ho Nam

A semiconductor device and a method of fabricating a semiconductor device, the device including a fin-type pattern extending in a first direction; a gate electrode extending in a second direction over the fin-type pattern, the second direction being different from the first direction; spacers on sidewalls of the gate electrode; a capping structure on the gate electrode and the spacers, the capping structure including a first capping pattern and a second capping pattern, the second capping pattern being on the first capping pattern; and an interlayer insulating film surrounding sidewalls of each of the spacers and sidewalls of the capping structure, the interlayer insulating film being in contact with the first capping pattern.

Semiconductor device

A semiconductor device includes a first interlayer insulating film; a conductive connection structure provided in the first interlayer insulating film; a second interlayer insulating film provided on the first interlayer insulating film; a wiring structure provided in the second interlayer insulating film and connected to the conductive connection structure; and an insertion liner interposed between an upper surface of the conductive connection structure and the wiring structure, the insertion liner including carbon.

Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content.

Semiconductor devices and methods of fabricating the same

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Seoul, South Korea

Nam Gyu Cho