Kabushiki Kaisha Toshiba

Cambridge Display Technology Limited

Cdt Oxford Limited

Nalin K Patel

Ilaria Grizzi

Clare Foden

Mark Leadbeater

Brian Tierney

Mark Levence Leadbeater

Andrew James Shields

Jeremy H Burroughes

Richard J Wilson

Llewellyn John Cooper

Natasha Conway

A polymer comprising a first repeat unit of formula (I), wherein each Ar is independently selected from optionally substituted aryl or heteroaryl and the group of formula (I) is present in a molar ratio of less than or equal to 10%, and, optionally, a second, optionally substituted repeat unit having a single nitrogen atom in its backbone of formula &#x2014;Ar&#x2014;N(Ar)&#x2014;Ar&#x2014; in a molar ratio of no greater than 5%.

Polymers, their preparation and uses

An optical device comprising an anode, a cathode comprising barium, strontium or calcium, and a layer of organic semiconducting material between the anode and the cathode wherein a layer of hole transporting and electron blocking material is located between the anode and the layer of organic semiconducting material.

Electroluminescent device comprising a cross-linked hole transporting and electron blocking material

An optical device such as a radiation detector or an optically activated memory includes a barrier region located between two active regions. One or more quantum dots are provided such that a change in the charging state of the quantum dot or dots affects the flow of current through the barrier region. The charging states of the quantum dot is changed by an optical device.

Optical device and a method of making an optical device

A semiconductor device is presented which exhibits both interband and intraband tunnelling. The device comprises two active layers (21, 23) which are sandwiched between two barrier layers (3, 5). These layers are located between first and second terminals (7, 9). The active layers (21, 23) are chosen such that the conduction band edge (27) of the first active layer (21) having a lower energy than the valence band edge (25) of the second active layer (23);

Semiconductor device

A semiconductor device comprises mutually separated first and third barrier layers interposed between the first and second patterned terminals. The device operates by the resonant tunneling of carriers from the second terminal to the first terminal. The first terminal is patterned into a section and a plurality of layers comprising the mutually separated first and second barrier layers are formed on top of the first terminal. A second terminal is then formed on top of the plurality of semiconductor layers. The second terminal is then patterned so that it only overlies the first terminal in confined region. A front-gate is then formed on top of the patterned second terminal.

Gated resonant tunneling device and fabricating method thereof

A semiconductor device according to the invention is characterized by comprising a heterostructure which comprises an active layer in which carriers can flow within a conduction channel, the heterostructure including a recessed region in which part of the conduction channel is disposed and substantially in the same plane as a pair of side gate, thereby defining a restricted conduction region of the conduction channel.

Growing community of inventors

Cambridge, United Kingdom

Nalin K Patel