Hynix Semiconductor Inc.

Skhynix Inc.

Nak-Kyu Park

Sun-Hye Shin

Hyun-Woo Lee

Won-Joo Yun

Keun-Soo Song

A semiconductor memory device includes a plurality of memory cell blocks each including a plurality of word lines and suitable for being selectively activated based on an active command and a row address, wherein word lines are selected from the respective activated memory cell blocks based on the active command and the row address, and a column decoding block sequentially accessing the activated memory cell blocks to input/output data thereof by decoding a column address based on the row address.

Semiconductor device and operating method thereof

A memory device includes a first memory bank comprising first and second memory blocks; a second memory bank comprising third and fourth memory blocks; and a bank selection unit suitable for selecting a memory bank corresponding to a bank address among the first and the second memory banks when an active command is applied, wherein the selected memory bank performs row access on a word line of an unselected memory block, while activating a word line of a memory block that is selected by a block address among memory blocks of the selected memory bank.

Memory device and memory system including the memory device

A semiconductor memory device may include: a plurality of memory mats; and a plurality of sense amplifier arrays arranged alternately with the memory mats, each sense amplifier array being suitable for sensing and amplifying data of memory mats adjacent thereto, wherein during a data sensing operation to a memory mat among the plurality of memory mats, in addition to a sense amplifier for the memory mat and sense amplifiers positioned immediately above and below the sense amplifier for the memory mat, at least one additional sense amplifier closest to the sense amplifier for the memory mat is also activated for providing additional amplification.

Semiconductor memory device

A semiconductor device includes a clock supply circuit configured to generate an internal clock by using an external clock, an internal circuit configured to operate in synchronization with the internal clock and enter a power-down mode in response to a power-down signal, and a controller configured to control an entry of the clock supply circuit into the power-down mode in response to a locking signal, which represents that the clock supply circuit has been locked, and the power-down signal.

Semiconductor device, method for operating the same, and memory system including the same

A slave device communicating with a master device includes a transmission unit configured to transmit a signal to the master device through a communication channel, a calibration unit configured to measure a flight time of a calibration signal which is transmitted to the master device and fed back through a calibration channel coupled to the master device, and a transmission delay unit configured to delay the signal transmitted from an internal circuit of the slave device to the transmission unit by a delay value determined according to the measurement result of the calibration unit.

Slave device, system including master device and slave device, method for operating the same, and chip package

A semiconductor integrated circuit includes a semiconductor chip having an edge area and a bank area located an inner portion of the edge area, and a column redundancy fuse block disposed in the edge area.

Semiconductor integrated circuit including column redundancy fuse block

A semiconductor IC device includes a core strobe signal generator configured to latch a read command signal according to an internal clock signal to generate a core strobe signal, a core block configured to output data stored in a memory cell in response to the core strobe signal, a data output unit configured to latch data output from the core block according to a plurality of control signals and output the latched data in a predetermined order, and a controller configured to generate the plurality of control signals by using both the core strobe signal and the internal clock signal.

Semiconductor IC device and data output method of the same

A reset signal generator of a semiconductor integrated circuit includes a counter that counts a clock signal in response to activation of a power-up signal and activates a count-result signal when the counted value reaches a target value, and a reset signal generating unit that activates a reset signal in response to the activation of the count result signal.

Reset signal generator and a method for generating reset signal of a semiconductor integrated circuit

An apparatus for calibrating on-die termination for a semiconductor integrated circuit includes a comparing unit that compares a code conversion voltage, which is obtained by converting an internal code into an analog voltage, with a reference voltage, and outputs a comparison result signal, a code control unit that compares a current comparison result signal and a previous comparison result signal, among comparison result signals obtained by sequential comparison operations by the comparing unit, to determine whether or not the levels thereof are the same, and outputs an external code update signal according to the comparison result, and a counter that increases or decreases the internal code according to the comparison result signal and outputs the internal code as an external code according to the external code update signal.

Apparatus and method of calibrating on-die termination for semiconductor integrated circuit

An apparatus for setting an operation mode in a DLL circuit generates a locking completion signal according to a level of a phase comparing signal obtained by comparing phases of a reference clock and a feedback clock. During three or more cycles of a pulse signal, it is determined whether a logic value of levels of the phase comparing signal is a specific combination, and the locking completion signal is selectively enabled.

Apparatus and method of setting operation mode in DLL circuit

A semiconductor memory device includes: a global input/output line; a first global core line; a second global core line; a global core line controller disposed between the first global core line and the second global core line; a first bank coupled to the global core line controller through the first global core line; and a second bank coupled to the global core line controller through the second global core line.

A domain crossing device for use in a semiconductor memory device, including: a unit for comparing a phase of an internal clock signal with a phase of a delay locked loop (DLL) clock signal to generate a first clock selection signal and a phase detection period signal in response to a detection starting signal and a second clock selection signal; a unit for generating a plurality of initial latency signals in response to the phase detection period signal, the detection starting signal and a column address strobe (CAS) latency signal; a unit for receiving the plurality of initial latency signals and the detection starting signal to generate a plurality of latency signals, a clock selection signal and the second clock selection signal; and a unit for generating the detection starting signal based on a self refresh signal, a power-up signal and a DLL disable signal.

Domain crossing device

There is provided a synchronous memory device having a simplified data input unit for receiving and transferring data to an internal memory cell block, which is adapted to high frequency and can reduce a power consumption. The synchronous memory device includes: a data alignment unit for aligning in parallel a plurality of data sequentially inputted through one data input pin as many as the number of prefetched data to generate a plurality of aligned data; a global I/O line driving unit for receiving the plurality of aligned data and outputting the even data or the odd data to a memory core area in response to a data input strobe signal; a data input strobe signal generating unit for buffering the clock signal to output the data input strobe signal; and a data input strobe signal control unit for generating a data input strobe control signal used to allow the data input strobe signal generating unit to output the data input strobe signal only at a period when an operation corresponding to the write command is carried out.

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Gyeonggi-do, South Korea

Nak-Kyu Park