Electronics and Telecommunications Research Institute

Nak Jin Choi

Jong Dae Kim

Hyung Kun Lee

Woo Seok Yang

Seung Eon Moon

Gyeong Sook Bang

Hyo Young Lee

Jung Hyun Lee

Jae Woo Lee

Kang Ho Park

Jong Hyurk Park

Jaewoo Lee

Hyoyoung Lee

Jonghyurk Park

Seungeon Moon

Hyung-Kun Lee

Mi Hee Jeong

Junghyun Lee

Ja Ryong Koo

Disclosed is an electrochemical gas sensor using micro electro mechanical systems (MEMS). The MEMS electrochemical gas sensor includes: a substrate a lower central region of which is etched by a predetermined thickness; a first insulation film formed on the substrate; a heat emitting resistance body formed on the first insulation film; a second insulation film formed on the heat emitting resistance body; a reference electrode formed in an upper central region of the second insulation film; a solid electrolyte formed on the reference electrode; and a detection electrode formed on the solid electrolyte.

MEMS electrochemical gas sensor

Disclosed are a gas sensor, and a method of manufacturing and using the same. The method includes: forming a detection material on a heater; coating an encapsulant on the detection material; and heating the heater to remove the encapsulant from the detection material when the gas sensor is operated.

Gas sensor and method of manufacturing the same

Provided are a dual-side micro gas sensor and a method of fabricating the same. The sensor may include an elastic layer, a heat-generating resistor layer on the elastic layer, an interlayered insulating layer on the heat-generating resistor layer, an upper sensing layer on the interlayered insulating layer, and a lower sensing layer provided below the elastic layer to face the heat-generating resistor layer, thereby reducing heat loss of the heat-generating resistor layer.

Dual-side micro gas sensor and method of fabricating the same

Disclosed are an MEMS type semiconductor gas sensor using a microheater having many holes and a method for manufacturing the same. The MEMS type semiconductor gas sensor includes: a substrate of which a central region is etched with a predetermined thickness; a second membrane formed at an upper portion of the central region of the substrate and having many holes; a heat emitting resistor formed on the second membrane and having many holes; a first membrane formed on the second membrane including the heat emitting resistor and having many holes; a sensing electrode formed on the first membrane and having many holes; and a sensing material formed on the sensing electrode.

Microelectromechanical systems type semiconductor gas sensor using microheater having many holes and method for manufacturing the same

A method of preparing a polymer actuator includes providing an ionic conductive polymer membrane; forming first and second metal electrodes respectively over first and second surfaces of the ionic conductive polymer membrane; substituting water used in the formation of the first and second metal electrodes with an ionic liquid stable to an electrolysis; and coating the first and second surfaces of the metal electrodes with a coating material.

Method of preparing a polymer actuator

Provided are a method of manufacturing nanoelectrode lines. The method includes the steps of: sequentially forming an insulating layer, a first photoresist layer, and a drop-shaped second photoresist on a substrate; disposing an imprint mold having a plurality of molding patterns over the second photoresist; applying pressure to the mold to allow the second photoresist to flow into the mold patterns; irradiating ultraviolet (UV) light onto the mold to cure the second photoresist; removing the mold from the cured second photoresist and patterning the second photoresist; patterning the first photoresist layer using the patterned second photoresist as a mask; patterning the insulating layer; and forming a metal layer between the patterned insulating layers. In this method, metal electrode lines are formed between insulating layers using an imprint lithography process, so that nanoelectronic devices can be freed from crosstalk between the metal electrode lines.

Method of manufacturing nanoelectrode lines using nanoimprint lithography process

Provided are a molecular electronic device and a method of fabricating the molecular electronic device. The molecular electronic device includes a substrate, an organic dielectric thin film formed over the substrate, a molecular active layer formed on the organic dielectric thin film and having a charge trap site, and an electrode formed on the molecular active layer. The organic dielectric thin film may be immobilized on the electrode or a Si layer by a self-assembled method. The organic dielectric thin film may include first and second molecular layers bound together through hydrogen bonds. An organic compound may be self-assembled over the substrate to form the organic dielectric thin film. The organic compound may include an M'-R-T structure, where M&#x2032;, R and T represent a thiol or silane derivative, a saturated or unsaturated Cto Chydrocarbon group which is substituted or unsubstituted with fluorine (F), and an amino(&#x2014;NH) or carboxyl (&#x2014;COOH) group, respectively.

Molecular electronic device including organic dielectric thin film and method of fabricating the same

Provided are a compound for a molecular electronic device which includes a terpyridine-ruthenium organic metal compound including a thiol anchoring group of the formula below, a method of synthesizing the compound and a molecular electronic device including a molecular active layer obtained from the compound.  In the formula, Rand Rare each a thioacetyl group or a hydrogen atom, at least one of Rand Ris a thioacetyl group, and m and n are each integers from 0 to 20. The molecular active layer, which is formed by self-assembling the compound on an electrode surface, composes a switching element and a memory element.

Compound for molecular electronic device having thiol anchoring group, method of synthesizing the compound, and molecular electronic device having molecular active layer obtained from the compound

Provided is a method of fabricating a nanoimprint mold which can form sub-100 nm fine pattern structures. The method includes forming patterns on a first substrate using an E-beam lithography (EBL) process, and transferring the patterns formed on the first substrate to a second substrate using a nanoimprint lithography (NIL) process to complete an NIL mold. Accordingly, the method can easily fabricate the nanoimprint mold at low costs on a quartz or glass substrate, which is not suitable for an EBL process to produce sub-100 nm patterns, by utilizing the advantages of the EBL process with a resolution of tens of nanometers.

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Daejeon, South Korea

Nak Jin Choi