National Research Council of Canada

Naiying Du

Zhao Li

Patrick Malenfant

Michael D Guiver

Jacques Lefebvre

Gilles P Robertson

Jingshe Song

Girjesh Dubey

Gregory Lopinski

Shan Zou

A thin film transistor (TFT) has a gate electrode; a gate insulation layer, a semiconducting channel separated from the gate electrode by the gate insulation layer; a source electrode and a drain electrode. The gate insulation layer is a cross-linked cyanoethylated polyhydroxy polymer, e.g. a cross-linked cyanoethylated pullulan, having a high dielectric constant and the semiconducting channel has a network of semiconducting carbon nanotubes. The semiconducting channel is adhered to the gate insulation layer through a polymeric material. The carbon nanotubes adhere to the polymeric material and the polymeric material reacts or interacts with the gate insulation layer. TFTs have high mobilities while maintaining good on/off ratios.

CNT thin film transistor with high K polymeric dielectric

A polymer of formula (I): where: n is an integer from 10 to 5,000; m is an integer from 10 to 5,000; Ar1 and Ar3 are the same or different and are residues derived from a tetra-hydroxy aromatic monomer, the tetra-hydroxy aromatic monomer being wherein R is the same or different and is H or a C-Calkyl, C-Calkenyl or C-Ccycloalkyl group; and, Ar2 and Ar4 are the same or different and are residues derived from a tetra-halogenated aromatic monomer, the tetra-halogenated aromatic monomer being wherein X is F, Cl or Br, and R1 and R2 are the same or different and are wherein y is an integer from 1 to 8; with the proviso that when Ar1 is the same as Ar3 and Ar2 is the same as Ar4, R1 and R2 are not both &#x2014;CN is useful as a material for gas separation, vapor separation, adsorbents or catalysis.

Ladder polymers with intrinsic microporosity and process for production thereof

A film of a carboxylated polymer of formula (I): wherein the sum of x, y and z is an integer from 10 to 10,000 and degree of hydrolysis is 0.05 or greater provides gas separation materials in which the degree of hydrolysis may be used to tune the selectivity of the gases to an optimal required range. Such films may be prepared by casting a film of a polymer of formula (II): wherein n is an integer from 10 to 10,000, and hydrolyzing all or a portion of the &#x2014;CN groups to form &#x2014;COOH groups.

Carboxylated polymers of intrinsic microporosity (PIMs) with tunable gas transport properties

A polymer of formula (I): where: n is an integer from 10 to 5,000; m is an integer from 10 to 5,000; Ar1 and Ar3 are the same or different and are residues derived from a tetra-hydroxy aromatic monomer, the tetra-hydroxy aromatic monomer being wherein R is the same or different and is H or a C-Calkyl, C2-C8 alkenyl or C-Ccycloalkyl group; and, Ar2 and Ar4 are the same or different and are residues derived from a tetra-halogenated aromatic monomer, the tetra-halogenated aromatic monomer being wherein X is F, Cl or Br, and R1 and R2 are the same or different and are wherein y is an integer from 1 to 8; with the proviso that when Ar1 is the same as Ar3 and Ar2 is the same as Ar4, R1 and R2 are not both &#x2014;CN is useful as a material for gas separation, vapor separation, adsorbents or catalysis. 

Ladder polymers with instrinsic microporosity and process for production thereof

The invention provides a tetrazole-containing polymer of intrinsic microporosity comprising (10) or more subunits, wherein one or more of the subunits comprise one or more tetrazolyl moieties. In one embodiment, a polymer of intrinsic microporosity (PIM-1) was modified using a 'click chemistry' [2+3] cycloaddition reaction with sodium azide and zinc chloride to yield new PIMs containing tetrazole units. Polymers of the present invention are useful as high-performance materials for membrane-based gas separation, materials for ion exchange resins, materials for chelating resins, materials for superabsorbents, materials for ion conductive matrixes, materials for catalyst supports or materials for nanoparticle stabilizers.

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Ottawa, Canada

Naiying Du