Texas Instruments Corporation

Qualcomm Incorporated

Naishad Parikh

Aishwarya Dubey

Pranjal Tiwari

Ritu Chaba

Anand Bhat

Puneet Sabbarwal

Bipin Duggal

An apparatus including a memory subsystem. The memory subsystem includes a data input and a clock input. The apparatus also includes a variable delay circuit coupled to one of the data input or the clock input. Additionally, the apparatus includes a controller coupled to the variable delay circuit. The controller is configured to dynamically control the delay of the variable delay circuit. The controller may adjust the delay of the variable delay circuit based on at least one of timing data for a memory subsystem design of the memory subsystem, timing data for the memory subsystem, a voltage applied to the memory subsystem, or a temperature of the memory subsystem.

Memory hold margin characterization and correction circuit

In an embodiment, a scannable storage element includes an input circuit for providing a first signal at first node based on a data input and a scan input, where the scan input is of pull-up logic in functional mode. The input circuit includes a first pull-up path comprising a switch receiving data input and a switch receiving scan enable input, and second pull-up path comprising a switch receiving scan input, first pull-down path comprising a switch receiving the scan enable input and a switch receiving the scan input, and second pull-down path comprising a switch receiving the data input. The storage element includes a shifting circuit configured to provide a second signal in response to the first signal at second node, and a scan output buffer coupled to the second node and configured to provide a scan output at a scan output terminal in response to the second signal.

Scan chain in an integrated circuit

A scannable storage circuit includes a scan enable input, a storage element having a Node coupled to a data output buffer for driving a data output terminal. The data output buffer includes an inverter; a transmission gate having a first MOS transistor and a second MOS transistor with sources and drains coupled to each other, drains coupled to an output of the inverter and sources coupled to the data output terminal and gates coupled to the scan enable input and an inverted scan enable input. A third MOS transistor and a fourth MOS transistor is coupled to the sources of the first and second MOS transistors, the third MOS transistor and fourth MOS transistor are configured to pull up or pull down the data output terminal in response to a first control signal and a second control signal respectively. A scan output is generated from the output of the inverter.

Programmable scannable storage circuit

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Bengaluru, India

Naishad Parikh