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Naiqing Zhang

Yifeng Wu

Lee Mc Carthy

New Group III nitride based field effect transistors and high electron mobility transistors are disclosed that provide enhanced high frequency response characteristics. The preferred transistors are made from GaN/AlGaN and have a dielectric layer on the surface of their conductive channels. The dielectric layer has a high percentage of donor electrons that neutralize traps in the conductive channel such that the traps cannot slow the high frequency response of the transistors. A new method of manufacturing the transistors is also disclosed, with the new method using sputtering to deposit the dielectric layer.

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Goleta, CA, United States of America

Naiqing Zhang