Micron Technology Incorporated

Naiming Liu

Jordan D Greenlee

John Mark Meldrim

Yifen Liu

John David Hopkins

Yingda Dong

George Matamis

Allen McTeer

Rita J Klein

Nancy M Lomeli

Shuangqiang Luo

Xiao Li

Swapnil Lengade

Alyssa N Scarbrough

Farrell Martin Good

Albert Fayrushin

Silvia Borsari

Jiewei Chen

Justin D Shepherdson

Shen Hu

Jeslin J Wu

Jeremy F Adams

Carlo Mendoza Orofeo

Everett A Mcteer

Kadir Abdul

Yan Song

A microelectronic device comprises conductive structures and insulative structures vertically alternating with the conductive structures. At least one of the insulative structures includes interfacial regions extending inward from vertical boundaries of the at least one of the insulative structures, and central region vertically interposed between the interfacial regions. The interfacial regions are doped with one or more of carbon and boron. The insulative structures comprise a lower concentration of the one or more of carbon and boron than the interfacial regions. Additional microelectronic devices, electronic systems, and methods are also described.

Microelectronic devices including stack structures having doped interfacial regions, and related systems and methods

A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers in the memory blocks. A through-array-via (TAV) region comprises TAV constructions that extend through the insulative tiers and the conductive tiers. The TAV constructions individually comprise a radially-outer insulative lining and a conductive core radially-inward of the insulative lining. The insulative lining comprises a radially-inner insulative material and a radially-outer insulative material that are of different compositions relative one another. The radially-outer insulative material is in radially-outer recesses that are in the first tiers as compared to the second tiers. The radially-inner insulative material extends elevationally along the insulative tiers and the conductive tiers. Other embodiments, including method, are disclosed.

Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

A method of forming a microelectronic device comprises forming a stack structure comprising a vertically alternating sequence of insulative structures and additional insulative structures, at least some of the additional insulative structures comprising silicon nitride having a ratio of nitrogen atoms to silicon atoms greater than about 1.58:1.00, forming openings through the stack structure, and forming cell pillar structures within the openings, the cell pillar structures individually comprising a semiconductor channel material vertically extending through the stack structure. Related methods, microelectronic devices, memory devices, and electronic systems are also described.

Microelectronic devices with nitrogen-rich insulative structures

An electronic device comprises a stack of alternating dielectric materials and conductive materials, a pillar region extending vertically through the stack, an oxide material within the pillar region and laterally adjacent to the dielectric materials and the conductive materials of the stack, and a storage node laterally adjacent to the oxide material and within the pillar region. A charge confinement region of the storage node is in horizontal alignment with the conductive materials of the stack. A height of the charge confinement region in a vertical direction is less than a height of a respective, laterally adjacent conductive material of the stack in the vertical direction. Related methods and systems are also disclosed.

Electronic devices comprising reduced charge confinement regions in storage nodes of pillars and related methods

Growing community of inventors

Boise, ID, United States of America

Naiming Liu