Csmc Technologies Fab2 Co., Ltd.

Globalfoundries Inc.

Southeast University

Nailong He

Sen Zhang

Wei Lin

Longxing Shi

Weifeng Sun

Hao Wang

Jing Zhu

Upinder Singh

Guangsheng Zhang

Jingchuan Zhao

Zhili Zhang

Lihui Gu

Wentong Zhang

Xuchao Li

Teng Liu

Shaohong Li

Guichuang Zhu

Yun Lan

A laterally diffused metal-oxide-semiconductor (LDMOS) device and a method for fabricating the LDMOS device are disclosed. The device includes: a substrate () having a second conductivity type; a drift region () that has a first conductivity type and is disposed on the substrate (), wherein the first conductivity type is opposite to the second conductivity type; a plurality of layers of doped structures disposed in the drift region (), each layer of the doped structure comprising at least one doped bar () extending in a lengthwise direction of a conductive channel; and a plurality of doped polysilicon pillars () disposed in the drift region () so as to extend downward through the doped bar () of at least one of the layer of doped structures, wherein ions doped in the doped polysilicon pillars () and ions doped in the doped bar have opposite conductivity types.

Lateral diffusion metal oxide semiconductor device and manufacturing method therefor

The semiconductor device comprises a high-voltage device region, a low-voltage device region, and an isolation region. It further comprises a drift region, a second conductivity type well region, an isolation well region, an isolation structure, a power device source region, and a power device drain region. The drift region is disposed in the high-voltage device region. The second conductivity type well region is disposed in the isolation region and extends to the low-voltage device region. The isolation well region is disposed in the drift region and separates the drift region into a high-voltage drift region and a power device drift region. The isolation structure is disposed in the isolation well region. The power device source region is disposed in the isolation region and located in the second conductivity type well region, and the power device drain region is disposed in the power device drift region.

Semiconductor device and manufacturing method thereof

A semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a semiconductor substrate. A first drift region is formed in the semiconductor substrate. A gate structure is formed on the semiconductor substrate A part of the gate structure covers a part of the first drift region. A first trench is formed in the first drift region, and a drain region is formed in the semiconductor substrate at the bottom of the first trench.

Semiconductor device and manufacturing method therefor

The present disclosure provides a lateral double-diffused metal oxide semiconductor device and a manufacturing method thereof, and an electronic apparatus. The method includes: providing a semiconductor substrate, and forming a drift region and a body region in the semiconductor substrate; forming a drain region in the drift region, forming a source region in the body region, and forming, on the body region, a gate structure extending to the drift region; implanting ions of a first type, so as to form, at a bottom of the drift region, first ion implantation regions extending along a direction from the gate structure to the drain region; forming, above the first ion implantation regions, a plurality of mutually spaced deep trench structures and fin structures between adjacent ones of the deep trench structures; and implanting ions of a second type in the deep trench structures to form second ion implantation regions.

Lateral double-diffused metal oxide semiconductor device and manufacturing method thereof, and electronic apparatus

A laterally double-diffused metal oxide semiconductor device is provided, including: a drift region () having a first conductivity type; a first body region () disposed on the drift region () and having a second conductivity type, the first conductivity type and the second conductivity type being opposite conductivity types; a first conductivity type region () disposed in the first body region (); a second body region () disposed in the first conductivity type region () and having the second conductivity type; a source region () disposed in the second body region () and having the first conductivity type; and a contact region () disposed in the first body region () and having the second conductivity type.

Laterally double-diffused metal oxide semiconductor device

A manufacturing method of an LDMOS device comprises: obtaining a wafer formed with a doped region having a first conductivity type, wherein a top buried layer is formed inside the doped region having the first conductivity type, and a field oxide insulation layer structure is formed on the top buried layer; disposing a trench on the doped region having the first conductivity type, wherein the trench extends to the top buried layer and the field oxide insulation layer structure such that a portion of the top buried layer is removed; injecting an ion of a second conductivity type to form a well region below the trench; and forming a doped source region in the well region. The first conductivity type and the second conductivity type are opposite conductivity types.

Method of manufacturing an LDMOS device having a well region below a groove

A lateral double-diffused metal oxide semiconductor component and a manufacturing method therefor. The lateral double-diffused metal oxide semiconductor component comprises: a semiconductor substrate, the semiconductor substrate being provided thereon with a drift area; the drift area being provided therein with a trap area and a drain area, the trap area being provided therein with an active area and a channel; the drift area being provided therein with a deep trench isolation structure arranged between the trap area and the drain area, and the deep trench isolation structure being provided at the bottom thereof with alternately arranged first p-type injection areas and first n-type injection areas.

Lateral double-diffused metal oxide semiconductor component and manufacturing method therefor

The disclosure relates to integrated circuit (IC) structures and fabrication techniques. Methods according to the disclosure can include: providing a precursor structure including: a first inter-metal dielectric (IMD); a barrier dielectric positioned on the first IMD; forming an insulator on the barrier dielectric of the precursor structure, wherein an upper surface of the insulator includes a first trench and a second trench laterally separated from the first trench; forming an alignment marker over the precursor structure by filling the first trench with a first refractory metal film; forming a first metal-insulator-metal (MIM) electrode by filling the second trench with the first refractory metal film; recessing the insulator without exposing an upper surface of the barrier dielectric; forming a MIM dielectric layer on the insulator; and forming a second MIM electrode on the MIM dielectric layer, such that the second MIM electrode overlies a portion of the first MIM electrode.

Growing community of inventors

Wuxi New District, China

Nailong He