Taiwan Semiconductor Manufacturing Comp. Ltd.

Nail Etkin Can Akkaya

Yih Wang

Jonathan Tsung-Yung Chang

Mahmut Sinangil

A device includes a memory array formed on a front side of a substrate. The memory array is accessible through a plurality of bit lines. The memory device includes a switch transistor formed on the front side of the substrate. The switch transistor is operatively coupled to the plurality of bit lines. The memory device includes a first capacitor formed on a back side of the substrate. The first capacitor is configured to reduce a voltage level present on at least one of the plurality of bit lines, in response to the switch transistor being turned off.

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Hsinchu, Taiwan

Nail Etkin Can Akkaya